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https://doi.org/10.1063/1.1448672
DC Field | Value | |
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dc.title | Effect of a titanium cap in reducing interfacial oxides in the formation of nickel silicide | |
dc.contributor.author | Tan, W.L. | |
dc.contributor.author | Pey, K.L. | |
dc.contributor.author | Chooi, S.Y.M. | |
dc.contributor.author | Ye, J.H. | |
dc.contributor.author | Osipowicz, T. | |
dc.date.accessioned | 2014-06-17T02:46:31Z | |
dc.date.available | 2014-06-17T02:46:31Z | |
dc.date.issued | 2002-02-15 | |
dc.identifier.citation | Tan, W.L., Pey, K.L., Chooi, S.Y.M., Ye, J.H., Osipowicz, T. (2002-02-15). Effect of a titanium cap in reducing interfacial oxides in the formation of nickel silicide. Journal of Applied Physics 91 (5) : 2901-2909. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1448672 | |
dc.identifier.issn | 00218979 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/55736 | |
dc.description.abstract | Interfacial silicon oxide present at the Ni-Si interface hampers the silicidation between Ni and Si. In this work we present findings of the interaction of a Ti cap layer on top of Ni to remove the interfacial native oxide and chemically grown silicon oxide at several annealing temperatures. It was found that at 500°C, Ti diffuses through the Ni layer and segregates at the Ni/Si interface, which subsequently reduces the interfacial silicon oxide and enables nickel monosilicide (NiSi) formation at 600°C. The thickness of the Ti cap layer was found to strongly influence the temperature of the onset of nickel silicidation. A thin Ti cap layer resulted in the onset temperature of nickel silicidation being the same as that without a Ti cap layer, whereas a thick Ti cap layer lowered the onset temperature of the nickel silicidation. © 2002 American Institute of Physics. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.1448672 | |
dc.source | Scopus | |
dc.type | Article | |
dc.contributor.department | PHYSICS | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.doi | 10.1063/1.1448672 | |
dc.description.sourcetitle | Journal of Applied Physics | |
dc.description.volume | 91 | |
dc.description.issue | 5 | |
dc.description.page | 2901-2909 | |
dc.description.coden | JAPIA | |
dc.identifier.isiut | 000174182400047 | |
Appears in Collections: | Staff Publications |
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