Please use this identifier to cite or link to this item:
|Title:||Effect of a titanium cap in reducing interfacial oxides in the formation of nickel silicide|
|Source:||Tan, W.L., Pey, K.L., Chooi, S.Y.M., Ye, J.H., Osipowicz, T. (2002-02-15). Effect of a titanium cap in reducing interfacial oxides in the formation of nickel silicide. Journal of Applied Physics 91 (5) : 2901-2909. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1448672|
|Abstract:||Interfacial silicon oxide present at the Ni-Si interface hampers the silicidation between Ni and Si. In this work we present findings of the interaction of a Ti cap layer on top of Ni to remove the interfacial native oxide and chemically grown silicon oxide at several annealing temperatures. It was found that at 500°C, Ti diffuses through the Ni layer and segregates at the Ni/Si interface, which subsequently reduces the interfacial silicon oxide and enables nickel monosilicide (NiSi) formation at 600°C. The thickness of the Ti cap layer was found to strongly influence the temperature of the onset of nickel silicidation. A thin Ti cap layer resulted in the onset temperature of nickel silicidation being the same as that without a Ti cap layer, whereas a thick Ti cap layer lowered the onset temperature of the nickel silicidation. © 2002 American Institute of Physics.|
|Source Title:||Journal of Applied Physics|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Mar 7, 2018
WEB OF SCIENCETM
checked on Jan 24, 2018
checked on Mar 11, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.