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https://doi.org/10.1016/S0167-9317(01)00592-5
| Title: | Enhanced stability of Ni monosilicide on MOSFETs poly-Si gate stack | Authors: | Lee, P.S. Mangelinck, D. Pey, K.L. Ding, J. Chi, D.Z. Osipowicz, T. Dai, J.Y. See, A. |
Keywords: | Layer inversion LPCVD Ni silicidation Ni(Pt)Si RTCVD |
Issue Date: | Jan-2002 | Citation: | Lee, P.S., Mangelinck, D., Pey, K.L., Ding, J., Chi, D.Z., Osipowicz, T., Dai, J.Y., See, A. (2002-01). Enhanced stability of Ni monosilicide on MOSFETs poly-Si gate stack. Microelectronic Engineering 60 (1-2) : 171-181. ScholarBank@NUS Repository. https://doi.org/10.1016/S0167-9317(01)00592-5 | Abstract: | The formation and stability of Ni(Pt)Si on metal oxide semiconductor field effect transistor (MOSFETs) polycrystalline-Si (poly-Si) gate stack was investigated. Poly-Si and partial amorphous Si (a-Si) structures were grown using LPCVD and RTCVD techniques. For pure Ni silicidation, nucleation of NiSi2 was found at 700°C, which is slightly lower than that on monocrystalline Si (about 750°C). With Pt addition, Ni(Pt)Si was found up to 800°C, implying the important role of Gibbs free energy changes in enhancing the monosilicide stability. The extent of layer inversion of Ni(Pt)Si on RTCVD-Si is less than that on LPCVD-Si and thus results in a slower sheet resistance degradation. © 2002 Elsevier Science B.V. All rights reserved. | Source Title: | Microelectronic Engineering | URI: | http://scholarbank.nus.edu.sg/handle/10635/83704 | ISSN: | 01679317 | DOI: | 10.1016/S0167-9317(01)00592-5 |
| Appears in Collections: | Staff Publications |
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