Enhanced stability of Ni monosilicide on MOSFETs poly-Si gate stack

Please use this identifier to cite or link to this item: https://doi.org/10.1016/S0167-9317(01)00592-5

Title:	Enhanced stability of Ni monosilicide on MOSFETs poly-Si gate stack
Authors:	Lee, P.S. Mangelinck, D. Pey, K.L. Ding, J. Chi, D.Z. Osipowicz, T. Dai, J.Y. See, A.
Keywords:	Layer inversion LPCVD Ni silicidation Ni(Pt)Si RTCVD
Issue Date:	Jan-2002
Citation:	Lee, P.S., Mangelinck, D., Pey, K.L., Ding, J., Chi, D.Z., Osipowicz, T., Dai, J.Y., See, A. (2002-01). Enhanced stability of Ni monosilicide on MOSFETs poly-Si gate stack. Microelectronic Engineering 60 (1-2) : 171-181. ScholarBank@NUS Repository. https://doi.org/10.1016/S0167-9317(01)00592-5
Abstract:	The formation and stability of Ni(Pt)Si on metal oxide semiconductor field effect transistor (MOSFETs) polycrystalline-Si (poly-Si) gate stack was investigated. Poly-Si and partial amorphous Si (a-Si) structures were grown using LPCVD and RTCVD techniques. For pure Ni silicidation, nucleation of NiSi2 was found at 700°C, which is slightly lower than that on monocrystalline Si (about 750°C). With Pt addition, Ni(Pt)Si was found up to 800°C, implying the important role of Gibbs free energy changes in enhancing the monosilicide stability. The extent of layer inversion of Ni(Pt)Si on RTCVD-Si is less than that on LPCVD-Si and thus results in a slower sheet resistance degradation. © 2002 Elsevier Science B.V. All rights reserved.
Source Title:	Microelectronic Engineering
URI:	http://scholarbank.nus.edu.sg/handle/10635/83704
ISSN:	01679317
DOI:	10.1016/S0167-9317(01)00592-5
Appears in Collections:	Staff Publications

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