Please use this identifier to cite or link to this item:
https://doi.org/10.1016/S0167-9317(01)00592-5
| Title: | Enhanced stability of Ni monosilicide on MOSFETs poly-Si gate stack | Authors: | Lee, P.S. Mangelinck, D. Pey, K.L. Ding, J. Chi, D.Z. Osipowicz, T. Dai, J.Y. See, A. |
Keywords: | Layer inversion LPCVD Ni silicidation Ni(Pt)Si RTCVD |
Issue Date: | Jan-2002 | Citation: | Lee, P.S., Mangelinck, D., Pey, K.L., Ding, J., Chi, D.Z., Osipowicz, T., Dai, J.Y., See, A. (2002-01). Enhanced stability of Ni monosilicide on MOSFETs poly-Si gate stack. Microelectronic Engineering 60 (1-2) : 171-181. ScholarBank@NUS Repository. https://doi.org/10.1016/S0167-9317(01)00592-5 | Abstract: | The formation and stability of Ni(Pt)Si on metal oxide semiconductor field effect transistor (MOSFETs) polycrystalline-Si (poly-Si) gate stack was investigated. Poly-Si and partial amorphous Si (a-Si) structures were grown using LPCVD and RTCVD techniques. For pure Ni silicidation, nucleation of NiSi2 was found at 700°C, which is slightly lower than that on monocrystalline Si (about 750°C). With Pt addition, Ni(Pt)Si was found up to 800°C, implying the important role of Gibbs free energy changes in enhancing the monosilicide stability. The extent of layer inversion of Ni(Pt)Si on RTCVD-Si is less than that on LPCVD-Si and thus results in a slower sheet resistance degradation. © 2002 Elsevier Science B.V. All rights reserved. | Source Title: | Microelectronic Engineering | URI: | http://scholarbank.nus.edu.sg/handle/10635/83704 | ISSN: | 01679317 | DOI: | 10.1016/S0167-9317(01)00592-5 |
| Appears in Collections: | Staff Publications |
Show full item record
Files in This Item:
There are no files associated with this item.
SCOPUSTM
Citations
21
checked on Aug 5, 2020
WEB OF SCIENCETM
Citations
19
checked on Aug 5, 2020
Page view(s)
82
checked on Aug 2, 2020
Google ScholarTM
Check
Altmetric
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.