Please use this identifier to cite or link to this item: https://doi.org/10.1016/S0167-9317(01)00592-5
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dc.titleEnhanced stability of Ni monosilicide on MOSFETs poly-Si gate stack
dc.contributor.authorLee, P.S.
dc.contributor.authorMangelinck, D.
dc.contributor.authorPey, K.L.
dc.contributor.authorDing, J.
dc.contributor.authorChi, D.Z.
dc.contributor.authorOsipowicz, T.
dc.contributor.authorDai, J.Y.
dc.contributor.authorSee, A.
dc.date.accessioned2014-10-07T04:44:14Z
dc.date.available2014-10-07T04:44:14Z
dc.date.issued2002-01
dc.identifier.citationLee, P.S., Mangelinck, D., Pey, K.L., Ding, J., Chi, D.Z., Osipowicz, T., Dai, J.Y., See, A. (2002-01). Enhanced stability of Ni monosilicide on MOSFETs poly-Si gate stack. Microelectronic Engineering 60 (1-2) : 171-181. ScholarBank@NUS Repository. https://doi.org/10.1016/S0167-9317(01)00592-5
dc.identifier.issn01679317
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83704
dc.description.abstractThe formation and stability of Ni(Pt)Si on metal oxide semiconductor field effect transistor (MOSFETs) polycrystalline-Si (poly-Si) gate stack was investigated. Poly-Si and partial amorphous Si (a-Si) structures were grown using LPCVD and RTCVD techniques. For pure Ni silicidation, nucleation of NiSi2 was found at 700°C, which is slightly lower than that on monocrystalline Si (about 750°C). With Pt addition, Ni(Pt)Si was found up to 800°C, implying the important role of Gibbs free energy changes in enhancing the monosilicide stability. The extent of layer inversion of Ni(Pt)Si on RTCVD-Si is less than that on LPCVD-Si and thus results in a slower sheet resistance degradation. © 2002 Elsevier Science B.V. All rights reserved.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/S0167-9317(01)00592-5
dc.sourceScopus
dc.subjectLayer inversion
dc.subjectLPCVD
dc.subjectNi silicidation
dc.subjectNi(Pt)Si
dc.subjectRTCVD
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.contributor.departmentPHYSICS
dc.contributor.departmentMATERIALS SCIENCE
dc.description.doi10.1016/S0167-9317(01)00592-5
dc.description.sourcetitleMicroelectronic Engineering
dc.description.volume60
dc.description.issue1-2
dc.description.page171-181
dc.description.codenMIENE
dc.identifier.isiut000173194900020
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