Please use this identifier to cite or link to this item:
https://doi.org/10.1016/S0167-9317(01)00592-5
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dc.title | Enhanced stability of Ni monosilicide on MOSFETs poly-Si gate stack | |
dc.contributor.author | Lee, P.S. | |
dc.contributor.author | Mangelinck, D. | |
dc.contributor.author | Pey, K.L. | |
dc.contributor.author | Ding, J. | |
dc.contributor.author | Chi, D.Z. | |
dc.contributor.author | Osipowicz, T. | |
dc.contributor.author | Dai, J.Y. | |
dc.contributor.author | See, A. | |
dc.date.accessioned | 2014-10-07T04:44:14Z | |
dc.date.available | 2014-10-07T04:44:14Z | |
dc.date.issued | 2002-01 | |
dc.identifier.citation | Lee, P.S., Mangelinck, D., Pey, K.L., Ding, J., Chi, D.Z., Osipowicz, T., Dai, J.Y., See, A. (2002-01). Enhanced stability of Ni monosilicide on MOSFETs poly-Si gate stack. Microelectronic Engineering 60 (1-2) : 171-181. ScholarBank@NUS Repository. https://doi.org/10.1016/S0167-9317(01)00592-5 | |
dc.identifier.issn | 01679317 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/83704 | |
dc.description.abstract | The formation and stability of Ni(Pt)Si on metal oxide semiconductor field effect transistor (MOSFETs) polycrystalline-Si (poly-Si) gate stack was investigated. Poly-Si and partial amorphous Si (a-Si) structures were grown using LPCVD and RTCVD techniques. For pure Ni silicidation, nucleation of NiSi2 was found at 700°C, which is slightly lower than that on monocrystalline Si (about 750°C). With Pt addition, Ni(Pt)Si was found up to 800°C, implying the important role of Gibbs free energy changes in enhancing the monosilicide stability. The extent of layer inversion of Ni(Pt)Si on RTCVD-Si is less than that on LPCVD-Si and thus results in a slower sheet resistance degradation. © 2002 Elsevier Science B.V. All rights reserved. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/S0167-9317(01)00592-5 | |
dc.source | Scopus | |
dc.subject | Layer inversion | |
dc.subject | LPCVD | |
dc.subject | Ni silicidation | |
dc.subject | Ni(Pt)Si | |
dc.subject | RTCVD | |
dc.type | Conference Paper | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.contributor.department | PHYSICS | |
dc.contributor.department | MATERIALS SCIENCE | |
dc.description.doi | 10.1016/S0167-9317(01)00592-5 | |
dc.description.sourcetitle | Microelectronic Engineering | |
dc.description.volume | 60 | |
dc.description.issue | 1-2 | |
dc.description.page | 171-181 | |
dc.description.coden | MIENE | |
dc.identifier.isiut | 000173194900020 | |
Appears in Collections: | Staff Publications |
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