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|Title:||Characterization of Ni- and Ni(Pt)-silicide formation on narrow polycrystalline Si lines by Raman spectroscopy||Authors:||Lee, P.S.
|Issue Date:||2000||Citation:||Lee, P.S.,Mangelinck, D.,Pey, K.L.,Ding, J.,Osipowicz, T.,Ho, C.S.,Chen, G.L.,Chan, L. (2000). Characterization of Ni- and Ni(Pt)-silicide formation on narrow polycrystalline Si lines by Raman spectroscopy. Materials Research Society Symposium - Proceedings 591 : 269-275. ScholarBank@NUS Repository.||Abstract:||The formation and thermal stability of Ni- and Ni(Pt) silicide on narrow polycrystalline Si (poly-Si) lines have been investigated using the non-destructive micro-Raman technique. The presence of Ni or Ni(Pt)Si on poly-Si lines with linewidths ranging from 0.5 μm to 0.25 μm has been monitored by a distinct Raman peak at around 215 cm-1. Ni(Pt)Si was clearly identified to be present up to a RTA temperature of 900°C on narrow poly-Si lines as compared to pure NiSi which was found only up to 750°C. Raman scattering from the 100×100 μm2 poly-Si pads showed the formation of NiSi2 at 750°C for pure Ni-salicidation and 900°C for Ni(Pt)-salicidation respectively. The difference in the stability of NiSi on the poly-Si pads and lines is discussed in terms of agglomeration, inversion and/or nucleation of NiSi2 that could be due to difference in nucleation sites and/or stress. In addition, a correlation between the line sheet resistance and the presence of Ni silicide was found using micro-Raman mapping along single poly-Si lines.||Source Title:||Materials Research Society Symposium - Proceedings||URI:||http://scholarbank.nus.edu.sg/handle/10635/81387||ISSN:||02729172|
|Appears in Collections:||Staff Publications|
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