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|Title:||Interface properties and reliability of ultrathin oxynitride films grown on strained Si1-xGex substrates||Authors:||Samanta, S.K.
|Issue Date:||1-Mar-2003||Citation:||Samanta, S.K., Chatterjee, S., Maikap, S., Bera, L.K., Banerjee, H.D., Maiti, C.K. (2003-03-01). Interface properties and reliability of ultrathin oxynitride films grown on strained Si1-xGex substrates. Journal of Applied Physics 93 (5) : 2464-2471. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1540224||Abstract:||The study of the role of nitrogen in improving the interface properties and the reliability of oxynitride/SiGe interfaces and the dielectric properties of oxynitride films using constraint theory was presented. Time-of-flight secondary ion mass spectrometry was used to study the nitrogen distribution in oxynitride films. It was found that dielectric films grown in N2O ambient and annealed in N2 had excellent electrical properties.||Source Title:||Journal of Applied Physics||URI:||http://scholarbank.nus.edu.sg/handle/10635/82555||ISSN:||00218979||DOI:||10.1063/1.1540224|
|Appears in Collections:||Staff Publications|
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