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|Title:||Effects of nitric-oxide-plasma treatment on the electrical properties of tetraethylorthosilicate-deposited silicon dioxides on strained-Si1-xGex layers||Authors:||Senapati, B.
|Issue Date:||18-Sep-2000||Citation:||Senapati, B.,Samanta, S.K.,Maikap, S.,Bera, L.K.,Maiti, C.K. (2000-09-18). Effects of nitric-oxide-plasma treatment on the electrical properties of tetraethylorthosilicate-deposited silicon dioxides on strained-Si1-xGex layers. Applied Physics Letters 77 (12) : 1840-1842. ScholarBank@NUS Repository.||Abstract:||Gate-quality ultrathin silicon dioxide films on strained-Si0.74Ge0.26 layers have been deposited by microwave plasma-enhanced chemical vapor deposition technique using tetraethylorthosilicate. Effect of nitric-oxide (NO)-plasma treatment on the electrical properties of the deposited oxides have been studied using a metal-insulator-semiconductor structure. A significant improvement in the interface trap level density (Dit) and charge trapping behavior under Fowler-Nordheim constant current stressing is observed for NO-plasma treated deposited oxide films. © 2000 American Institute of Physics.||Source Title:||Applied Physics Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/80378||ISSN:||00036951|
|Appears in Collections:||Staff Publications|
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