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|Title:||Reliability of ultrathin (||Authors:||Samanta, S.K.
|Issue Date:||Jan-2003||Citation:||Samanta, S.K., Chatterjee, S., Choi, W.K., Bera, L.K., Banerjee, H.D., Maiti, C.K. (2003-01). Reliability of ultrathin (. Semiconductor Science and Technology 18 (1) : 33-38. ScholarBank@NUS Repository. https://doi.org/10.1088/0268-1242/18/1/305||Abstract:||The reliability of ultrathin oxides on strained SiGe heterolayers was discussed. The effects of nitrogen (N2)-annealing on the electrical properties and reliability of the nitrogen oxide (N2O)-grown oxynitrides were also examined. The results showed that the thermal stability of the lattice structure of SiGe was preserved for 800-950 °C oxidation.||Source Title:||Semiconductor Science and Technology||URI:||http://scholarbank.nus.edu.sg/handle/10635/82976||ISSN:||02681242||DOI:||10.1088/0268-1242/18/1/305|
|Appears in Collections:||Staff Publications|
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