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|Title:||Effects of thermal annealing on the electrical properties of tetraethylorthosilicate-based oxynitride films deposited on strained-Si1-xGex||Authors:||Samanta, S.K.
|Issue Date:||Feb-2002||Citation:||Samanta, S.K., Bera, L.K., Benerjee, H.D., Maiti, C.K. (2002-02). Effects of thermal annealing on the electrical properties of tetraethylorthosilicate-based oxynitride films deposited on strained-Si1-xGex. Semiconductor Science and Technology 17 (2) : 141-144. ScholarBank@NUS Repository. https://doi.org/10.1088/0268-1242/17/2/309||Abstract:||We report on the effects of thermal annealing on the electrical properties of tetraethylorthosilicate (TEOS)-deposited ultra-thin nitrided oxide using nitric oxide. Ultra-thin oxynitride films have been deposited on strained Si0.82Ge0.18 layers at a low temperature by microwave plasma-enhanced chemical vapour deposition. The interface trap charge density (Dit), fixed oxide charge density (Qf/q), flatband voltage (VFB) and border trap charge (Qbt) are found to decrease with annealing up to a temperature of 800°C. Under Fowler-Nordheim (F-N) constant current stressing, the oxynitride films show an improvement in the charge trapping behaviour after annealing. The reliability characteristics have been studied using charge-to-breakdown (QBD) measurements.||Source Title:||Semiconductor Science and Technology||URI:||http://scholarbank.nus.edu.sg/handle/10635/82239||ISSN:||02681242||DOI:||10.1088/0268-1242/17/2/309|
|Appears in Collections:||Staff Publications|
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