Please use this identifier to cite or link to this item: https://doi.org/10.1088/0268-1242/17/2/309
Title: Effects of thermal annealing on the electrical properties of tetraethylorthosilicate-based oxynitride films deposited on strained-Si1-xGex
Authors: Samanta, S.K.
Bera, L.K. 
Benerjee, H.D.
Maiti, C.K.
Issue Date: Feb-2002
Citation: Samanta, S.K., Bera, L.K., Benerjee, H.D., Maiti, C.K. (2002-02). Effects of thermal annealing on the electrical properties of tetraethylorthosilicate-based oxynitride films deposited on strained-Si1-xGex. Semiconductor Science and Technology 17 (2) : 141-144. ScholarBank@NUS Repository. https://doi.org/10.1088/0268-1242/17/2/309
Abstract: We report on the effects of thermal annealing on the electrical properties of tetraethylorthosilicate (TEOS)-deposited ultra-thin nitrided oxide using nitric oxide. Ultra-thin oxynitride films have been deposited on strained Si0.82Ge0.18 layers at a low temperature by microwave plasma-enhanced chemical vapour deposition. The interface trap charge density (Dit), fixed oxide charge density (Qf/q), flatband voltage (VFB) and border trap charge (Qbt) are found to decrease with annealing up to a temperature of 800°C. Under Fowler-Nordheim (F-N) constant current stressing, the oxynitride films show an improvement in the charge trapping behaviour after annealing. The reliability characteristics have been studied using charge-to-breakdown (QBD) measurements.
Source Title: Semiconductor Science and Technology
URI: http://scholarbank.nus.edu.sg/handle/10635/82239
ISSN: 02681242
DOI: 10.1088/0268-1242/17/2/309
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