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https://doi.org/10.1063/1.1413715
Title: | Spectroscopic ellipsometry and electrical studies of as-grown and rapid thermal oxidized Si1-x-yGexCy films | Authors: | Choi, W.K. Feng, W. Bera, L.K. Yang, C.Y. Mi, J. |
Issue Date: | Dec-2001 | Citation: | Choi, W.K., Feng, W., Bera, L.K., Yang, C.Y., Mi, J. (2001-12). Spectroscopic ellipsometry and electrical studies of as-grown and rapid thermal oxidized Si1-x-yGexCy films. Journal of Applied Physics 90 (11) : 5819-5824. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1413715 | Abstract: | Transmission electron microscopy results showed the formation of SiC precipitation in a rapid thermally oxidized (RTO) Si1-x-yGexCy sample with high-C content. The spectroscopic ellipsometry results showed that the E1 gap increased and E2 gap decreased as the C concentration increased. For the oxidized samples, the amplitude of the E2 transitions reduced rapidly and the E1 transition shifted to a lower energy. The reduction in the E2 transitions was due to the presence of the oxide layer. A high-Ge content layer and the low-C content in the RTO films accounted for the E1 shift to lower energy. The electrical measurements showed that RTO at 800°C did not improve the oxide quality as compared to 1000°C. © 2001 American Institute of Physics. | Source Title: | Journal of Applied Physics | URI: | http://scholarbank.nus.edu.sg/handle/10635/83046 | ISSN: | 00218979 | DOI: | 10.1063/1.1413715 |
Appears in Collections: | Staff Publications |
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