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|Title:||Spectroscopic ellipsometry and electrical studies of as-grown and rapid thermal oxidized Si1-x-yGexCy films||Authors:||Choi, W.K.
|Issue Date:||Dec-2001||Citation:||Choi, W.K., Feng, W., Bera, L.K., Yang, C.Y., Mi, J. (2001-12). Spectroscopic ellipsometry and electrical studies of as-grown and rapid thermal oxidized Si1-x-yGexCy films. Journal of Applied Physics 90 (11) : 5819-5824. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1413715||Abstract:||Transmission electron microscopy results showed the formation of SiC precipitation in a rapid thermally oxidized (RTO) Si1-x-yGexCy sample with high-C content. The spectroscopic ellipsometry results showed that the E1 gap increased and E2 gap decreased as the C concentration increased. For the oxidized samples, the amplitude of the E2 transitions reduced rapidly and the E1 transition shifted to a lower energy. The reduction in the E2 transitions was due to the presence of the oxide layer. A high-Ge content layer and the low-C content in the RTO films accounted for the E1 shift to lower energy. The electrical measurements showed that RTO at 800°C did not improve the oxide quality as compared to 1000°C. © 2001 American Institute of Physics.||Source Title:||Journal of Applied Physics||URI:||http://scholarbank.nus.edu.sg/handle/10635/83046||ISSN:||00218979||DOI:||10.1063/1.1413715|
|Appears in Collections:||Staff Publications|
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