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|Title:||High quality gate dielectrics grown by rapid thermal processing using split-N 2O technique on strained-Si 0.91Ge 0.09 films||Authors:||Bera, L.K.
|Keywords:||Gate oxide integrity
|Issue Date:||Aug-2001||Citation:||Bera, L.K., Choi, W.K., Tan, C.S., Samanta, S.K., Maiti, C.K. (2001-08). High quality gate dielectrics grown by rapid thermal processing using split-N 2O technique on strained-Si 0.91Ge 0.09 films. IEEE Electron Device Letters 22 (8) : 387-389. ScholarBank@NUS Repository. https://doi.org/10.1109/55.936352||Abstract:||Thermal stability and strain relaxation temperature of strained Si 0.91Ge 0.09 layer has been investigated using double crystal x-ray diffraction (DCXRD). High quality gate oxynitride layers rapid thermally grown on strained Si 0.91Ge 0.09 using N 2O and split N 2O cycle technique below strained relaxed temperature is reported. A positive fixed oxide charge density was observed for N 2O and split-N 2O grown films. The O 2 grown films exhibit a negative fixed oxide charge. The excellent improvements in the leakage current, breakdown field and charge-to-breakdown value of the N 2O or split-N 2O grown films were achieved compared to pure O 2 grown films.||Source Title:||IEEE Electron Device Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/82454||ISSN:||07413106||DOI:||10.1109/55.936352|
|Appears in Collections:||Staff Publications|
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