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|Title:||Lattice vibrations in In1-x-yGaxAlxAs quaternary alloys||Authors:||Ramam, A.
|Issue Date:||15-Dec-1996||Citation:||Ramam, A.,Chua, S.J. (1996-12-15). Lattice vibrations in In1-x-yGaxAlxAs quaternary alloys. Journal of Applied Physics 80 (12) : 7157-7159. ScholarBank@NUS Repository.||Abstract:||We report here Raman observations due to lattice vibrations in the InGaAlAs quaternary alloy grown on an InP substrate by molecular-beam epitaxy. The variation with doping, alloy composition, and lattice mismatch are presented. The dominant bands observed in the spectra are of the three binaries, namely, the GaAs-, InAs-, and AlAs-like optical phonon vibrations. The relative intensity of the peaks and the Raman shifts are related to the alloy composition in the band-gap engineered quaternary material. © 1996 American Institute of Physics.||Source Title:||Journal of Applied Physics||URI:||http://scholarbank.nus.edu.sg/handle/10635/80674||ISSN:||00218979|
|Appears in Collections:||Staff Publications|
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