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|Title:||Formation of Ti/Al ohmic contacts on Si-doped GaN epilayers by low temperature annealing||Authors:||Tan, L.S.
|Issue Date:||Jun-2000||Citation:||Tan, L.S., Prakash, S., Ng, K.M., Ramam, A., Chua, S.J., Wee, A.T.S., Lim, S.L. (2000-06). Formation of Ti/Al ohmic contacts on Si-doped GaN epilayers by low temperature annealing. Semiconductor Science and Technology 15 (6) : 585-588. ScholarBank@NUS Repository. https://doi.org/10.1088/0268-1242/15/6/317||Abstract:||Ohmic contacts have been fabricated on Si-doped GaN using Ti/Al by low temperature annealing at 500°C. A contact resistivity of 8.6 × 10-6 ohm cm2 was obtained for n-GaN samples doped to 3.67 × 1018 cm-3. Secondary ion mass spectrometry (SIMS) analysis showed that Al diffused through the Ti layer after annealing. Furthermore, energy dispersive x-ray spectroscopy (EDS) analysis showed that reaction products of Al, Ti, Ga and N were present at the interface. Hence, a complex ternary or quaternary nitride as a possible low barrier height material to n-GaN may have resulted in good ohmic contact. Photoluminescence (PL) showed that there was no degradation in the epilayer quality of the film after annealing at 500°C for 25 minutes.||Source Title:||Semiconductor Science and Technology||URI:||http://scholarbank.nus.edu.sg/handle/10635/80446||ISSN:||02681242||DOI:||10.1088/0268-1242/15/6/317|
|Appears in Collections:||Staff Publications|
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