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Title: Formation of Ti/Al ohmic contacts on Si-doped GaN epilayers by low temperature annealing
Authors: Tan, L.S. 
Prakash, S. 
Ng, K.M.
Ramam, A. 
Chua, S.J. 
Wee, A.T.S. 
Lim, S.L. 
Issue Date: Jun-2000
Citation: Tan, L.S., Prakash, S., Ng, K.M., Ramam, A., Chua, S.J., Wee, A.T.S., Lim, S.L. (2000-06). Formation of Ti/Al ohmic contacts on Si-doped GaN epilayers by low temperature annealing. Semiconductor Science and Technology 15 (6) : 585-588. ScholarBank@NUS Repository.
Abstract: Ohmic contacts have been fabricated on Si-doped GaN using Ti/Al by low temperature annealing at 500°C. A contact resistivity of 8.6 × 10-6 ohm cm2 was obtained for n-GaN samples doped to 3.67 × 1018 cm-3. Secondary ion mass spectrometry (SIMS) analysis showed that Al diffused through the Ti layer after annealing. Furthermore, energy dispersive x-ray spectroscopy (EDS) analysis showed that reaction products of Al, Ti, Ga and N were present at the interface. Hence, a complex ternary or quaternary nitride as a possible low barrier height material to n-GaN may have resulted in good ohmic contact. Photoluminescence (PL) showed that there was no degradation in the epilayer quality of the film after annealing at 500°C for 25 minutes.
Source Title: Semiconductor Science and Technology
ISSN: 02681242
DOI: 10.1088/0268-1242/15/6/317
Appears in Collections:Staff Publications

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