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|Title:||Etching of GaN using Inductively Coupled Plasma||Authors:||Ramam, A.
|Issue Date:||2000||Citation:||Ramam, A.,Chua, S.J. (2000). Etching of GaN using Inductively Coupled Plasma. Proceedings of SPIE - The International Society for Optical Engineering 3975 : I/-. ScholarBank@NUS Repository.||Abstract:||In this paper the etching of GaN epitaxial layers using the Inductively Coupled Plasma (ICP) technique is reported. Chlorine chemistry was used to etch the material and experiments were conducted to study the effect of various process parameters such as plasma pressure, RIE/ICP power and Cl2 concentration to arrive at optimum etching conditions. The selectivity of GaN etching with photoresist mask was evaluated and GaN etch rates varying from 300-3000 A/min were achieved. These results have been applied to mesa etching in the fabrication of blue LEDs.||Source Title:||Proceedings of SPIE - The International Society for Optical Engineering||URI:||http://scholarbank.nus.edu.sg/handle/10635/81412||ISSN:||0277786X|
|Appears in Collections:||Staff Publications|
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