Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/81412
Title: Etching of GaN using Inductively Coupled Plasma
Authors: Ramam, A. 
Chua, S.J. 
Issue Date: 2000
Citation: Ramam, A.,Chua, S.J. (2000). Etching of GaN using Inductively Coupled Plasma. Proceedings of SPIE - The International Society for Optical Engineering 3975 : I/-. ScholarBank@NUS Repository.
Abstract: In this paper the etching of GaN epitaxial layers using the Inductively Coupled Plasma (ICP) technique is reported. Chlorine chemistry was used to etch the material and experiments were conducted to study the effect of various process parameters such as plasma pressure, RIE/ICP power and Cl2 concentration to arrive at optimum etching conditions. The selectivity of GaN etching with photoresist mask was evaluated and GaN etch rates varying from 300-3000 A/min were achieved. These results have been applied to mesa etching in the fabrication of blue LEDs.
Source Title: Proceedings of SPIE - The International Society for Optical Engineering
URI: http://scholarbank.nus.edu.sg/handle/10635/81412
ISSN: 0277786X
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

Google ScholarTM

Check


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.