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Title: Dynamics of hydrides on hydrogen-terminated silicon (111)-(1×1) surface
Authors: Ye, J.H.
Bok, T.H.
Pan, J.S. 
Li, S.F.Y. 
Lin, J.Y. 
Issue Date: 15-Jul-1999
Citation: Ye, J.H.,Bok, T.H.,Pan, J.S.,Li, S.F.Y.,Lin, J.Y. (1999-07-15). Dynamics of hydrides on hydrogen-terminated silicon (111)-(1×1) surface. Journal of Physical Chemistry B 103 (28) : 5820-5825. ScholarBank@NUS Repository.
Abstract: X-ray photoelectron spectroscopy (XPS) and static secondary ion mass spectrometer (SSIMS) have been applied to characterize Si(111) surface treated with 40% NH4F solution. As-treated Si(111) surface is predominately terminated with monohydrides and free of contamination. The dynamics of etching process on ultra-clean atomically flat hydrogen-terminated Si(111) surface in 40% NH4F solution has been examined at various potentials including the open circuit potential (OCP) by using in situ electrochemical scanning tunneling microscopy (ECSTM). Two distinct mechanisms are observed: (1) dihydride terminated step silicon atoms are dissolved much faster than the defect-free monohydride terminated ones; (2) dihydrides in the corner of {110} zigzag enclosed characteristic triangular pits lead to fast erosion of silicon atoms. Our results explain dynamic mechanics in formation of triangular pits on atomically flat silicon (111) surface in solution. © 1999 American Chemical Society.
Source Title: Journal of Physical Chemistry B
ISSN: 10895647
Appears in Collections:Staff Publications

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