Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/115684
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dc.titleDynamics of hydrides on hydrogen-terminated silicon (111)-(1×1) surface
dc.contributor.authorYe, J.H.
dc.contributor.authorBok, T.H.
dc.contributor.authorPan, J.S.
dc.contributor.authorLi, S.F.Y.
dc.contributor.authorLin, J.Y.
dc.date.accessioned2014-12-12T07:31:11Z
dc.date.available2014-12-12T07:31:11Z
dc.date.issued1999-07-15
dc.identifier.citationYe, J.H.,Bok, T.H.,Pan, J.S.,Li, S.F.Y.,Lin, J.Y. (1999-07-15). Dynamics of hydrides on hydrogen-terminated silicon (111)-(1×1) surface. Journal of Physical Chemistry B 103 (28) : 5820-5825. ScholarBank@NUS Repository.
dc.identifier.issn10895647
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/115684
dc.description.abstractX-ray photoelectron spectroscopy (XPS) and static secondary ion mass spectrometer (SSIMS) have been applied to characterize Si(111) surface treated with 40% NH4F solution. As-treated Si(111) surface is predominately terminated with monohydrides and free of contamination. The dynamics of etching process on ultra-clean atomically flat hydrogen-terminated Si(111) surface in 40% NH4F solution has been examined at various potentials including the open circuit potential (OCP) by using in situ electrochemical scanning tunneling microscopy (ECSTM). Two distinct mechanisms are observed: (1) dihydride terminated step silicon atoms are dissolved much faster than the defect-free monohydride terminated ones; (2) dihydrides in the corner of {110} zigzag enclosed characteristic triangular pits lead to fast erosion of silicon atoms. Our results explain dynamic mechanics in formation of triangular pits on atomically flat silicon (111) surface in solution. © 1999 American Chemical Society.
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentINST OF MATERIALS RESEARCH & ENGINEERING
dc.contributor.departmentPHYSICS
dc.contributor.departmentCHEMISTRY
dc.description.sourcetitleJournal of Physical Chemistry B
dc.description.volume103
dc.description.issue28
dc.description.page5820-5825
dc.description.codenJPCBF
dc.identifier.isiutNOT_IN_WOS
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