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Title: Germanium-tin (GeSn) p-channel MOSFETs fabricated on (100) and (111) surface orientations with Sub-400 °cSi2H6 passivation
Authors: Gong, X.
Han, G. 
Bai, F.
Su, S.
Guo, P.
Yang, Y.
Cheng, R. 
Zhang, D.
Zhang, G.
Xue, C.
Cheng, B.
Pan, J. 
Zhang, Z.
Tok, E.S. 
Antoniadis, D.
Yeo, Y.-C. 
Keywords: (100) and (111) surface orientations
GeSn p-channel metal-oxide- semiconductor field-effect transistors (pMOSFETs)
Si2H6 passivation
Issue Date: 2013
Citation: Gong, X., Han, G., Bai, F., Su, S., Guo, P., Yang, Y., Cheng, R., Zhang, D., Zhang, G., Xue, C., Cheng, B., Pan, J., Zhang, Z., Tok, E.S., Antoniadis, D., Yeo, Y.-C. (2013). Germanium-tin (GeSn) p-channel MOSFETs fabricated on (100) and (111) surface orientations with Sub-400 °cSi2H6 passivation. IEEE Electron Device Letters 34 (3) : 339-341. ScholarBank@NUS Repository.
Abstract: In this letter, we report the first study of the dependence of carrier mobility and drive current IDsat of Ge0.958Sn 0.042 p-channel metal-oxide-semiconductor field-effect transistors (pMOSFETs) on surface orientations. Compressively strained Ge 0.958Sn0.042 channels were grown on (100) and (111) Ge substrates. Sub-400 °CSi2H6 treatment was introduced for the passivation of the GeSn surface prior to gate stack formation. Source/drain series resistance and subthreshold swing S were found to be independent of surface orientation. The smallest reported S of 130 mV/decade for GeSn pMOSFETs is achieved. The (111)-oriented device demonstrates 13% higher IDsat over the (100)-oriented one at a VGS-VTH of-0.6 V and VDS of-0.9 V. We also found that GeSn pMOSFETs with (111) surface orientation show 18% higher hole mobility than GeSn pMOSFETs with (100) orientation. © 1980-2012 IEEE.
Source Title: IEEE Electron Device Letters
ISSN: 07413106
DOI: 10.1109/LED.2012.2236880
Appears in Collections:Staff Publications

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