Please use this identifier to cite or link to this item:
|Title:||Germanium-tin (GeSn) p-channel MOSFETs fabricated on (100) and (111) surface orientations with Sub-400 °cSi2H6 passivation||Authors:||Gong, X.
|Keywords:||(100) and (111) surface orientations
GeSn p-channel metal-oxide- semiconductor field-effect transistors (pMOSFETs)
|Issue Date:||2013||Citation:||Gong, X., Han, G., Bai, F., Su, S., Guo, P., Yang, Y., Cheng, R., Zhang, D., Zhang, G., Xue, C., Cheng, B., Pan, J., Zhang, Z., Tok, E.S., Antoniadis, D., Yeo, Y.-C. (2013). Germanium-tin (GeSn) p-channel MOSFETs fabricated on (100) and (111) surface orientations with Sub-400 °cSi2H6 passivation. IEEE Electron Device Letters 34 (3) : 339-341. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2012.2236880||Abstract:||In this letter, we report the first study of the dependence of carrier mobility and drive current IDsat of Ge0.958Sn 0.042 p-channel metal-oxide-semiconductor field-effect transistors (pMOSFETs) on surface orientations. Compressively strained Ge 0.958Sn0.042 channels were grown on (100) and (111) Ge substrates. Sub-400 °CSi2H6 treatment was introduced for the passivation of the GeSn surface prior to gate stack formation. Source/drain series resistance and subthreshold swing S were found to be independent of surface orientation. The smallest reported S of 130 mV/decade for GeSn pMOSFETs is achieved. The (111)-oriented device demonstrates 13% higher IDsat over the (100)-oriented one at a VGS-VTH of-0.6 V and VDS of-0.9 V. We also found that GeSn pMOSFETs with (111) surface orientation show 18% higher hole mobility than GeSn pMOSFETs with (100) orientation. © 1980-2012 IEEE.||Source Title:||IEEE Electron Device Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/82415||ISSN:||07413106||DOI:||10.1109/LED.2012.2236880|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Apr 17, 2019
WEB OF SCIENCETM
checked on Apr 10, 2019
checked on Apr 21, 2019
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.