Full Name
HAN GENQUAN
Variants
Han, G.-Q.
Han, G.
 
 
 
Email
elehg@nus.edu.sg
 

Publications

Results 1-20 of 41 (Search time: 0.006 seconds).

Issue DateTitleAuthor(s)
12013(110)-oriented germanium-tin (Ge0.97Sn0.03) P-channel MOSFETsZhan, C.; Wang, W.; Gong, X.; Guo, P.; Liu, B.; Yang, Y.; Han, G. ; Yeo, Y.-C. 
22011A new Ge 2Sb 2Te 5 (GST) liner stressor featuring stress enhancement due to amorphous-crystalline phase change for sub-20 nm p-channel FinFETsDing, Y.; Cheng, R. ; Koh, S.-M.; Liu, B.; Gyanathan, A.; Zhou, Q. ; Tong, Y.; Lim, P.S.-Y.; Han, G. ; Yeo, Y.-C. 
3Feb-2012Device physics and design of a L-shaped germanium source tunneling transistorLow, K.L.; Zhan, C.; Han, G. ; Yang, Y.; Goh, K.-H.; Guo, P.; Toh, E.-H.; Yeo, Y.-C. 
4May-2012Dopant segregation and nickel stanogermanide contact formation on p +Ge 0.947Sn 0.053 source/drainHan, G. ; Su, S.; Zhou, Q. ; Guo, P.; Yang, Y.; Zhan, C.; Wang, L.; Wang, W.; Wang, Q.; Xue, C.; Cheng, B.; Yeo, Y.-C. 
52012Effect of fin doping concentration on the electrical characteristics of germanium-on-insulator multi-gate field-effect transistorLiu, B.; Gong, X.; Zhan, C.; Han, G. ; Daval, N.; Veytizou, C.; Delprat, D.; Nguyen, B.-Y.; Yeo, Y.-C. 
615-Nov-2012Electronic band structure and effective mass parameters of Ge 1-xSnx alloysLu Low, K.; Yang, Y.; Han, G. ; Fan, W.; Yeo, Y.-C. 
72012Electronic band structure and effective masses of Ge1-xSn x alloysLow, K.L.; Yang, Y.; Han, G. ; Fan, W.; Yeo, Y.-C. 
82010Enhancement of TFET performance using Dopant Profile-Steepening Implant and source dopant concentration engineering at tunneling junctionHan, G. ; Yee, Y.S.; Guo, P.; Yang, Y.; Fan, L.; Zhan, C.; Yeo, Y.-C. 
92012Fabrication and negative bias temperature instability (NBTI) study on Ge0.97Sn0.03 P-MOSFETs with Si2H6 passivation and HfO2 High-k and TaN metal GateGong, X.; Su, S.; Liu, B.; Wang, L.; Wang, W.; Yang, Y.; Cheng, R. ; Kong, E.; Cheng, B.; Han, G. ; Yeo, Y.-C. 
1028-Jul-2013Ge0.97Sn0.03 p-channel metal-oxide-semiconductor field-effect transistors: Impact of Si surface passivation layer thickness and post metal annealingGuo, P.; Han, G. ; Gong, X.; Liu, B.; Yang, Y.; Wang, W.; Zhou, Q. ; Pan, J.; Zhang, Z.; Soon Tok, E. ; Yeo, Y.-C. 
112013Germanium multiple-gate field-effect transistors formed on germanium-on-insulator substrateLiu, B.; Gong, X.; Zhan, C.; Han, G. ; Chin, H.-C.; Ling, M.-L.; Li, J.; Liu, Y.; Hu, J.; Daval, N.; Veytizou, C.; Delprat, D.; Nguyen, B.-Y.; Yeo, Y.-C. 
122012Germanium tin tunneling field-effect transistor for sub-0.4 v operationYang, Y.; Low, K.L.; Guo, P.; Wei, W.; Han, G. ; Yeo., Y.-C. 
132013Germanium-Tin (GeSn) N-channel MOSFETs with low temperature silicon surface passivationGuo, P.; Zhan, C.; Yang, Y.; Gong, X.; Liu, B.; Cheng, R. ; Wang, W.; Pan, J.; Zhang, Z.; Tok, E.S. ; Han, G. ; Yeo, Y.-C. 
142013Germanium-tin (GeSn) p-channel MOSFETs fabricated on (100) and (111) surface orientations with Sub-400 °cSi2H6 passivationGong, X.; Han, G. ; Bai, F.; Su, S.; Guo, P.; Yang, Y.; Cheng, R. ; Zhang, D.; Zhang, G.; Xue, C.; Cheng, B.; Pan, J. ; Zhang, Z.; Tok, E.S. ; Antoniadis, D.; Yeo, Y.-C. 
152012Germanium-tin + junction formed using phosphorus ion implant and 400 °c rapid thermal annealWang, L.; Su, S.; Wang, W.; Yang, Y.; Tong, Y.; Liu, B.; Guo, P.; Gong, X.; Zhang, G.; Xue, C.; Cheng, B.; Han, G. ; Yeo, Y.-C. 
1621-May-2013Germanium-tin n-channel tunneling field-effect transistor: Device physics and simulation studyYang, Y.; Lu Low, K.; Wang, W.; Guo, P.; Wang, L.; Han, G. ; Yeo, Y.-C. 
172012High hole mobility in strained germanium-tin (GeSn) channel pMOSFET fabricated on (111) substrateHan, G. ; Su, S.; Yang, Y.; Guo, P.; Gong, X.; Wang, L.; Wang, W.; Guo, C.; Zhang, G.; Xue, C.; Cheng, B.; Yeo, Y.C. 
182012High performance Ω-gate Ge FinFET featuring low temperature Si 2H 6 passivation and implantless Schottky-barrier NiGe metallic source/drainLiu, B.; Gong, X.; Han, G. ; Lim, P.S.Y.; Tong, Y.; Zhou, Q. ; Yang, Y.; Daval, N.; Pulido, M.; Delprat, D.; Nguyen, B.-Y.; Yeo, Y.-C. 
192011High-mobility germanium-tin (GeSn) P-channel MOSFETs featuring metallic source/drain and sub-370°C process modulesHan, G. ; Su, S.; Zhan, C.; Zhou, Q. ; Yang, Y.; Wang, L.; Guo, P.; Wei, W.; Wong, C.P.; Shen, Z.X.; Cheng, B.; Yeo, Y.-C. 
202012High-performance germanium ω-Gate MuGFET with schottky-barrier nickel germanide source/drain and low-temperature disilane-passivated gate stackLiu, B.; Gong, X.; Han, G. ; Lim, P.S.Y.; Tong, Y.; Zhou, Q. ; Yang, Y.; Daval, N.; Veytizou, C.; Delprat, D.; Nguyen, B.-Y.; Yeo, Y.-C.