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|Title:||High-mobility germanium-tin (GeSn) P-channel MOSFETs featuring metallic source/drain and sub-370°C process modules||Authors:||Han, G.
|Issue Date:||2011||Citation:||Han, G.,Su, S.,Zhan, C.,Zhou, Q.,Yang, Y.,Wang, L.,Guo, P.,Wei, W.,Wong, C.P.,Shen, Z.X.,Cheng, B.,Yeo, Y.-C. (2011). High-mobility germanium-tin (GeSn) P-channel MOSFETs featuring metallic source/drain and sub-370°C process modules. Technical Digest - International Electron Devices Meeting, IEDM : 16.7.1-16.7.3. ScholarBank@NUS Repository. https://doi.org/10.1109/IEDM.2011.6131569||Abstract:||We report the first demonstration of GeSn pMOSFETs. Key highlights of this work also includes a 180 °C GeSn MBE growth, sub-370 °C Si 2H 6 surface passivation and gate stack process for GeSn, and an implantless metallic NiGeSn S/D formed at 350 °C. A hole mobility of 430 cm 2/Vs is obtained for GeSn pMOSFETs, which is 66% higher than that of the Ge control pMOSFETs. GeSn pMOSFETs show a 64% lower S/D resistance as compared to the Ge control devices. © 2011 IEEE.||Source Title:||Technical Digest - International Electron Devices Meeting, IEDM||URI:||http://scholarbank.nus.edu.sg/handle/10635/83801||ISBN:||9781457705052||ISSN:||01631918||DOI:||10.1109/IEDM.2011.6131569|
|Appears in Collections:||Staff Publications|
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