Please use this identifier to cite or link to this item:
|Title:||High-mobility germanium-tin (GeSn) P-channel MOSFETs featuring metallic source/drain and sub-370°C process modules|
|Authors:||Han, G. |
|Source:||Han, G.,Su, S.,Zhan, C.,Zhou, Q.,Yang, Y.,Wang, L.,Guo, P.,Wei, W.,Wong, C.P.,Shen, Z.X.,Cheng, B.,Yeo, Y.-C. (2011). High-mobility germanium-tin (GeSn) P-channel MOSFETs featuring metallic source/drain and sub-370°C process modules. Technical Digest - International Electron Devices Meeting, IEDM : 16.7.1-16.7.3. ScholarBank@NUS Repository. https://doi.org/10.1109/IEDM.2011.6131569|
|Abstract:||We report the first demonstration of GeSn pMOSFETs. Key highlights of this work also includes a 180 °C GeSn MBE growth, sub-370 °C Si 2H 6 surface passivation and gate stack process for GeSn, and an implantless metallic NiGeSn S/D formed at 350 °C. A hole mobility of 430 cm 2/Vs is obtained for GeSn pMOSFETs, which is 66% higher than that of the Ge control pMOSFETs. GeSn pMOSFETs show a 64% lower S/D resistance as compared to the Ge control devices. © 2011 IEEE.|
|Source Title:||Technical Digest - International Electron Devices Meeting, IEDM|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Mar 8, 2018
checked on Mar 10, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.