Please use this identifier to cite or link to this item:
https://doi.org/10.1149/05009.0943ecst
| Title: | High hole mobility in strained germanium-tin (GeSn) channel pMOSFET fabricated on (111) substrate | Authors: | Han, G. Su, S. Yang, Y. Guo, P. Gong, X. Wang, L. Wang, W. Guo, C. Zhang, G. Xue, C. Cheng, B. Yeo, Y.C. |
Issue Date: | 2012 | Citation: | Han, G., Su, S., Yang, Y., Guo, P., Gong, X., Wang, L., Wang, W., Guo, C., Zhang, G., Xue, C., Cheng, B., Yeo, Y.C. (2012). High hole mobility in strained germanium-tin (GeSn) channel pMOSFET fabricated on (111) substrate. ECS Transactions 50 (9) : 943-948. ScholarBank@NUS Repository. https://doi.org/10.1149/05009.0943ecst | Abstract: | We report the demonstration of strained GeSn channel pMOSFETs on (111)- and (100)-oriented Ge substrates. The Sn composition is 4.1%. The device interface is passivated using (NH4)2S solution. Compared to devices on Ge(100), GeSn pMOSFETs on Ge(111) demonstrate a 20% enhancement in effective hole mobility at an inversion charge density (Qinv) of 2 × 10 13 cm-2. © The Electrochemical Society. | Source Title: | ECS Transactions | URI: | http://scholarbank.nus.edu.sg/handle/10635/83779 | ISBN: | 9781607683575 | ISSN: | 19385862 | DOI: | 10.1149/05009.0943ecst |
| Appears in Collections: | Staff Publications |
Show full item record
Files in This Item:
There are no files associated with this item.
SCOPUSTM
Citations
10
checked on Feb 19, 2021
WEB OF SCIENCETM
Citations
4
checked on Feb 19, 2021
Page view(s)
89
checked on Feb 15, 2021
Google ScholarTM
Check
Altmetric
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.