High performance Ω-gate Ge FinFET featuring low temperature Si 2H 6 passivation and implantless Schottky-barrier NiGe metallic source/drain

Abstract

We report the first Ω-gate Germanium (Ge) p-channel FinFET with low-temperature Si 2H 6 passivation and implantless Schottky-barrier nickel germanide (NiGe) metallic Source/Drain, formed on high-quality GeOI substrates using sub-400°C process modules. As compared with reported multi-gate (MuG) Ge devices in which the Ge channels were formed by top-down approaches, the Ge FinFETs in this work have a record high on-state current I ON of ∼494 μA/μm at V GS - V TH = -1 V and V DS = -1 V. A high I ON/I OFF ratio of more than 3×10 4 and a high peak saturation transconductance G MSatMax of ∼540 μS/μm were achieved. © 2012 IEEE.