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|Title:||High performance Ω-gate Ge FinFET featuring low temperature Si 2H 6 passivation and implantless Schottky-barrier NiGe metallic source/drain||Authors:||Liu, B.
|Issue Date:||2012||Citation:||Liu, B.,Gong, X.,Han, G.,Lim, P.S.Y.,Tong, Y.,Zhou, Q.,Yang, Y.,Daval, N.,Pulido, M.,Delprat, D.,Nguyen, B.-Y.,Yeo, Y.-C. (2012). High performance Ω-gate Ge FinFET featuring low temperature Si 2H 6 passivation and implantless Schottky-barrier NiGe metallic source/drain. 2012 IEEE Silicon Nanoelectronics Workshop, SNW 2012 : -. ScholarBank@NUS Repository. https://doi.org/10.1109/SNW.2012.6243323||Abstract:||We report the first Ω-gate Germanium (Ge) p-channel FinFET with low-temperature Si 2H 6 passivation and implantless Schottky-barrier nickel germanide (NiGe) metallic Source/Drain, formed on high-quality GeOI substrates using sub-400°C process modules. As compared with reported multi-gate (MuG) Ge devices in which the Ge channels were formed by top-down approaches, the Ge FinFETs in this work have a record high on-state current I ON of ∼494 μA/μm at V GS - V TH = -1 V and V DS = -1 V. A high I ON/I OFF ratio of more than 3×10 4 and a high peak saturation transconductance G MSatMax of ∼540 μS/μm were achieved. © 2012 IEEE.||Source Title:||2012 IEEE Silicon Nanoelectronics Workshop, SNW 2012||URI:||http://scholarbank.nus.edu.sg/handle/10635/83789||ISBN:||9781467309943||DOI:||10.1109/SNW.2012.6243323|
|Appears in Collections:||Staff Publications|
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