Please use this identifier to cite or link to this item:
|Title:||High performance Ω-gate Ge FinFET featuring low temperature Si 2H 6 passivation and implantless Schottky-barrier NiGe metallic source/drain||Authors:||Liu, B.
|Issue Date:||2012||Citation:||Liu, B.,Gong, X.,Han, G.,Lim, P.S.Y.,Tong, Y.,Zhou, Q.,Yang, Y.,Daval, N.,Pulido, M.,Delprat, D.,Nguyen, B.-Y.,Yeo, Y.-C. (2012). High performance Ω-gate Ge FinFET featuring low temperature Si 2H 6 passivation and implantless Schottky-barrier NiGe metallic source/drain. 2012 IEEE Silicon Nanoelectronics Workshop, SNW 2012 : -. ScholarBank@NUS Repository. https://doi.org/10.1109/SNW.2012.6243323||Abstract:||We report the first Ω-gate Germanium (Ge) p-channel FinFET with low-temperature Si 2H 6 passivation and implantless Schottky-barrier nickel germanide (NiGe) metallic Source/Drain, formed on high-quality GeOI substrates using sub-400°C process modules. As compared with reported multi-gate (MuG) Ge devices in which the Ge channels were formed by top-down approaches, the Ge FinFETs in this work have a record high on-state current I ON of ∼494 μA/μm at V GS - V TH = -1 V and V DS = -1 V. A high I ON/I OFF ratio of more than 3×10 4 and a high peak saturation transconductance G MSatMax of ∼540 μS/μm were achieved. © 2012 IEEE.||Source Title:||2012 IEEE Silicon Nanoelectronics Workshop, SNW 2012||URI:||http://scholarbank.nus.edu.sg/handle/10635/83789||ISBN:||9781467309943||DOI:||10.1109/SNW.2012.6243323|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Feb 22, 2020
checked on Feb 16, 2020
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.