Please use this identifier to cite or link to this item: https://doi.org/10.1109/SNW.2012.6243323
Title: High performance Ω-gate Ge FinFET featuring low temperature Si 2H 6 passivation and implantless Schottky-barrier NiGe metallic source/drain
Authors: Liu, B.
Gong, X.
Han, G. 
Lim, P.S.Y.
Tong, Y.
Zhou, Q. 
Yang, Y.
Daval, N.
Pulido, M.
Delprat, D.
Nguyen, B.-Y.
Yeo, Y.-C. 
Issue Date: 2012
Source: Liu, B.,Gong, X.,Han, G.,Lim, P.S.Y.,Tong, Y.,Zhou, Q.,Yang, Y.,Daval, N.,Pulido, M.,Delprat, D.,Nguyen, B.-Y.,Yeo, Y.-C. (2012). High performance Ω-gate Ge FinFET featuring low temperature Si 2H 6 passivation and implantless Schottky-barrier NiGe metallic source/drain. 2012 IEEE Silicon Nanoelectronics Workshop, SNW 2012 : -. ScholarBank@NUS Repository. https://doi.org/10.1109/SNW.2012.6243323
Abstract: We report the first Ω-gate Germanium (Ge) p-channel FinFET with low-temperature Si 2H 6 passivation and implantless Schottky-barrier nickel germanide (NiGe) metallic Source/Drain, formed on high-quality GeOI substrates using sub-400°C process modules. As compared with reported multi-gate (MuG) Ge devices in which the Ge channels were formed by top-down approaches, the Ge FinFETs in this work have a record high on-state current I ON of ∼494 μA/μm at V GS - V TH = -1 V and V DS = -1 V. A high I ON/I OFF ratio of more than 3×10 4 and a high peak saturation transconductance G MSatMax of ∼540 μS/μm were achieved. © 2012 IEEE.
Source Title: 2012 IEEE Silicon Nanoelectronics Workshop, SNW 2012
URI: http://scholarbank.nus.edu.sg/handle/10635/83789
ISBN: 9781467309943
DOI: 10.1109/SNW.2012.6243323
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

1
checked on Feb 21, 2018

Page view(s)

22
checked on Feb 17, 2018

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.