Please use this identifier to cite or link to this item:
https://doi.org/10.1109/SNW.2012.6243323
DC Field | Value | |
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dc.title | High performance Ω-gate Ge FinFET featuring low temperature Si 2H 6 passivation and implantless Schottky-barrier NiGe metallic source/drain | |
dc.contributor.author | Liu, B. | |
dc.contributor.author | Gong, X. | |
dc.contributor.author | Han, G. | |
dc.contributor.author | Lim, P.S.Y. | |
dc.contributor.author | Tong, Y. | |
dc.contributor.author | Zhou, Q. | |
dc.contributor.author | Yang, Y. | |
dc.contributor.author | Daval, N. | |
dc.contributor.author | Pulido, M. | |
dc.contributor.author | Delprat, D. | |
dc.contributor.author | Nguyen, B.-Y. | |
dc.contributor.author | Yeo, Y.-C. | |
dc.date.accessioned | 2014-10-07T04:45:12Z | |
dc.date.available | 2014-10-07T04:45:12Z | |
dc.date.issued | 2012 | |
dc.identifier.citation | Liu, B.,Gong, X.,Han, G.,Lim, P.S.Y.,Tong, Y.,Zhou, Q.,Yang, Y.,Daval, N.,Pulido, M.,Delprat, D.,Nguyen, B.-Y.,Yeo, Y.-C. (2012). High performance Ω-gate Ge FinFET featuring low temperature Si 2H 6 passivation and implantless Schottky-barrier NiGe metallic source/drain. 2012 IEEE Silicon Nanoelectronics Workshop, SNW 2012 : -. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/SNW.2012.6243323" target="_blank">https://doi.org/10.1109/SNW.2012.6243323</a> | |
dc.identifier.isbn | 9781467309943 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/83789 | |
dc.description.abstract | We report the first Ω-gate Germanium (Ge) p-channel FinFET with low-temperature Si 2H 6 passivation and implantless Schottky-barrier nickel germanide (NiGe) metallic Source/Drain, formed on high-quality GeOI substrates using sub-400°C process modules. As compared with reported multi-gate (MuG) Ge devices in which the Ge channels were formed by top-down approaches, the Ge FinFETs in this work have a record high on-state current I ON of ∼494 μA/μm at V GS - V TH = -1 V and V DS = -1 V. A high I ON/I OFF ratio of more than 3×10 4 and a high peak saturation transconductance G MSatMax of ∼540 μS/μm were achieved. © 2012 IEEE. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/SNW.2012.6243323 | |
dc.source | Scopus | |
dc.type | Conference Paper | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.doi | 10.1109/SNW.2012.6243323 | |
dc.description.sourcetitle | 2012 IEEE Silicon Nanoelectronics Workshop, SNW 2012 | |
dc.description.page | - | |
dc.identifier.isiut | NOT_IN_WOS | |
Appears in Collections: | Staff Publications |
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