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|Title:||Germanium-tin + junction formed using phosphorus ion implant and 400 °c rapid thermal anneal||Authors:||Wang, L.
n + junction
|Issue Date:||2012||Citation:||Wang, L., Su, S., Wang, W., Yang, Y., Tong, Y., Liu, B., Guo, P., Gong, X., Zhang, G., Xue, C., Cheng, B., Han, G., Yeo, Y.-C. (2012). Germanium-tin + junction formed using phosphorus ion implant and 400 °c rapid thermal anneal. IEEE Electron Device Letters 33 (11) : 1529-1531. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2012.2212871||Abstract:||A Ge 0.976 Sn 0.024 n +/p diode was formed using phosphorus ion P + implant and rapid thermal annealing at 400 °C. Activation of P in Ge typically requires high temperatures (e.g., 700 °C), and it was found that this is not needed in the presence of a small amount of Sn. A high forward bias current of 320 A/cm 2 at-1 V is achieved for the Ge 0.976 Sn 0.024n +/diode. This is four times higher than that of the Ge n +/p control diode, which received the same P + implant but activated at 700 °C. The n +-GeSn region has a high active dopant concentration of 2.1 × \10 19cm -3, much higher than that in the Ge control. The increased active dopant concentration in GeSn reduces the width of the tunneling barrier between the Al contact and the n +-GeSn and increases the forward bias diode current. Enhancement of P activation in Ge 0.976 Sn 0.024 could possibly be as a result of passivation of vacancies in the Ge lattice due to Sn atoms. © 2012 IEEE.||Source Title:||IEEE Electron Device Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/82416||ISSN:||07413106||DOI:||10.1109/LED.2012.2212871|
|Appears in Collections:||Staff Publications|
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