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|Title:||(110)-oriented germanium-tin (Ge0.97Sn0.03) P-channel MOSFETs||Authors:||Zhan, C.
|Issue Date:||2013||Citation:||Zhan, C.,Wang, W.,Gong, X.,Guo, P.,Liu, B.,Yang, Y.,Han, G.,Yeo, Y.-C. (2013). (110)-oriented germanium-tin (Ge0.97Sn0.03) P-channel MOSFETs. 2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013 : -. ScholarBank@NUS Repository. https://doi.org/10.1109/VLSI-TSA.2013.6545607||Abstract:||We report the first demonstration of germanium-tin (GeSn) p-channel MOSFETs fabricated on the (110) surface. A gate-last process was used for transistor fabrication. 8 nm of high quality GeSn film was epitaxially grown on Ge (110) substrate. A low temperature disilane (Si2H6) treatment was employed to passivate the GeSn surface prior to TaN/HfO2 gate stack formation. Subthreshold swing S of 113 mV/decade was achieved, the lowest reported for GeSn pMOSFETs. © 2013 IEEE.||Source Title:||2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013||URI:||http://scholarbank.nus.edu.sg/handle/10635/83286||ISBN:||9781467330817||DOI:||10.1109/VLSI-TSA.2013.6545607|
|Appears in Collections:||Staff Publications|
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