(110)-oriented germanium-tin (Ge0.97Sn0.03) P-channel MOSFETs

Please use this identifier to cite or link to this item: https://doi.org/10.1109/VLSI-TSA.2013.6545607

Title:	(110)-oriented germanium-tin (Ge0.97Sn0.03) P-channel MOSFETs
Authors:	Zhan, C. Wang, W. Gong, X. Guo, P. Liu, B. Yang, Y. Han, G. Yeo, Y.-C.
Issue Date:	2013
Citation:	Zhan, C.,Wang, W.,Gong, X.,Guo, P.,Liu, B.,Yang, Y.,Han, G.,Yeo, Y.-C. (2013). (110)-oriented germanium-tin (Ge0.97Sn0.03) P-channel MOSFETs. 2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013 : -. ScholarBank@NUS Repository. https://doi.org/10.1109/VLSI-TSA.2013.6545607
Abstract:	We report the first demonstration of germanium-tin (GeSn) p-channel MOSFETs fabricated on the (110) surface. A gate-last process was used for transistor fabrication. 8 nm of high quality GeSn film was epitaxially grown on Ge (110) substrate. A low temperature disilane (Si2H6) treatment was employed to passivate the GeSn surface prior to TaN/HfO2 gate stack formation. Subthreshold swing S of 113 mV/decade was achieved, the lowest reported for GeSn pMOSFETs. © 2013 IEEE.
Source Title:	2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013
URI:	http://scholarbank.nus.edu.sg/handle/10635/83286
ISBN:	9781467330817
DOI:	10.1109/VLSI-TSA.2013.6545607
Appears in Collections:	Staff Publications

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