Please use this identifier to cite or link to this item: https://doi.org/10.1109/VLSI-TSA.2013.6545607
Title: (110)-oriented germanium-tin (Ge0.97Sn0.03) P-channel MOSFETs
Authors: Zhan, C.
Wang, W.
Gong, X.
Guo, P.
Liu, B.
Yang, Y.
Han, G. 
Yeo, Y.-C. 
Issue Date: 2013
Citation: Zhan, C.,Wang, W.,Gong, X.,Guo, P.,Liu, B.,Yang, Y.,Han, G.,Yeo, Y.-C. (2013). (110)-oriented germanium-tin (Ge0.97Sn0.03) P-channel MOSFETs. 2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013 : -. ScholarBank@NUS Repository. https://doi.org/10.1109/VLSI-TSA.2013.6545607
Abstract: We report the first demonstration of germanium-tin (GeSn) p-channel MOSFETs fabricated on the (110) surface. A gate-last process was used for transistor fabrication. 8 nm of high quality GeSn film was epitaxially grown on Ge (110) substrate. A low temperature disilane (Si2H6) treatment was employed to passivate the GeSn surface prior to TaN/HfO2 gate stack formation. Subthreshold swing S of 113 mV/decade was achieved, the lowest reported for GeSn pMOSFETs. © 2013 IEEE.
Source Title: 2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013
URI: http://scholarbank.nus.edu.sg/handle/10635/83286
ISBN: 9781467330817
DOI: 10.1109/VLSI-TSA.2013.6545607
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