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|Title:||Germanium tin tunneling field-effect transistor for sub-0.4 v operation||Authors:||Yang, Y.
|Issue Date:||2012||Citation:||Yang, Y., Low, K.L., Guo, P., Wei, W., Han, G., Yeo., Y.-C. (2012). Germanium tin tunneling field-effect transistor for sub-0.4 v operation. ECS Transactions 50 (9) : 979-986. ScholarBank@NUS Repository. https://doi.org/10.1149/05009.0979ecst||Abstract:||Germanium Tin (Ge1-xSnx) as a group IV material has a direct and small band-gap for x > 0.11, which is attractive for the application in tunneling field-effect transistor (TFET). In this work, the design of Ge1-xSnx TFET operating at low supply voltages is investigated by simulation. Device simulation results show that Ge 1-xSnx-based TFET can achieve high tunneling current and has potential for logic applications using sub-0.4 V supply voltage. © The Electrochemical Society.||Source Title:||ECS Transactions||URI:||http://scholarbank.nus.edu.sg/handle/10635/83763||ISBN:||9781607683575||ISSN:||19385862||DOI:||10.1149/05009.0979ecst|
|Appears in Collections:||Staff Publications|
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