Please use this identifier to cite or link to this item:
|Title:||Germanium tin tunneling field-effect transistor for sub-0.4 v operation||Authors:||Yang, Y.
|Issue Date:||2012||Citation:||Yang, Y., Low, K.L., Guo, P., Wei, W., Han, G., Yeo., Y.-C. (2012). Germanium tin tunneling field-effect transistor for sub-0.4 v operation. ECS Transactions 50 (9) : 979-986. ScholarBank@NUS Repository. https://doi.org/10.1149/05009.0979ecst||Abstract:||Germanium Tin (Ge1-xSnx) as a group IV material has a direct and small band-gap for x > 0.11, which is attractive for the application in tunneling field-effect transistor (TFET). In this work, the design of Ge1-xSnx TFET operating at low supply voltages is investigated by simulation. Device simulation results show that Ge 1-xSnx-based TFET can achieve high tunneling current and has potential for logic applications using sub-0.4 V supply voltage. © The Electrochemical Society.||Source Title:||ECS Transactions||URI:||http://scholarbank.nus.edu.sg/handle/10635/83763||ISBN:||9781607683575||ISSN:||19385862||DOI:||10.1149/05009.0979ecst|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
WEB OF SCIENCETM
checked on Apr 1, 2019
checked on Jun 21, 2019
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.