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Title: Germanium tin tunneling field-effect transistor for sub-0.4 v operation
Authors: Yang, Y.
Low, K.L.
Guo, P.
Wei, W.
Han, G. 
Yeo., Y.-C. 
Issue Date: 2012
Citation: Yang, Y., Low, K.L., Guo, P., Wei, W., Han, G., Yeo., Y.-C. (2012). Germanium tin tunneling field-effect transistor for sub-0.4 v operation. ECS Transactions 50 (9) : 979-986. ScholarBank@NUS Repository.
Abstract: Germanium Tin (Ge1-xSnx) as a group IV material has a direct and small band-gap for x > 0.11, which is attractive for the application in tunneling field-effect transistor (TFET). In this work, the design of Ge1-xSnx TFET operating at low supply voltages is investigated by simulation. Device simulation results show that Ge 1-xSnx-based TFET can achieve high tunneling current and has potential for logic applications using sub-0.4 V supply voltage. © The Electrochemical Society.
Source Title: ECS Transactions
ISBN: 9781607683575
ISSN: 19385862
DOI: 10.1149/05009.0979ecst
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