Please use this identifier to cite or link to this item:
Title: Electronic band structure and effective masses of Ge1-xSn x alloys
Authors: Low, K.L.
Yang, Y.
Han, G. 
Fan, W.
Yeo, Y.-C. 
Issue Date: 2012
Citation: Low, K.L., Yang, Y., Han, G., Fan, W., Yeo, Y.-C. (2012). Electronic band structure and effective masses of Ge1-xSn x alloys. ECS Transactions 50 (9) : 519-526. ScholarBank@NUS Repository.
Abstract: The electronic band structures of Ge1-xSnx alloys for Sn composition varying from 0 to 20% were investigated using the Empirical Pseudopotential Method (EPM). By tuning the adjustable form factors of EPM, the band features which agree well with the reported experimental data were successfully reproduced. From the calculated band structures of Ge 1-xSnx alloys along high symmetrical lines in the Brillouin Zone, the effective masses at the band edges were extracted by using a parabolic line fit. The bowing parameters of hole and electron effective masses were derived by fitting the effective mass at different Sn compositions by a quadratic polynomial. © The Electrochemical Society.
Source Title: ECS Transactions
ISBN: 9781607683575
ISSN: 19385862
DOI: 10.1149/05009.0519ecst
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.


checked on Jan 11, 2022

Page view(s)

checked on Jan 13, 2022

Google ScholarTM



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.