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|Title:||Germanium-Tin (GeSn) N-channel MOSFETs with low temperature silicon surface passivation||Authors:||Guo, P.
|Issue Date:||2013||Citation:||Guo, P.,Zhan, C.,Yang, Y.,Gong, X.,Liu, B.,Cheng, R.,Wang, W.,Pan, J.,Zhang, Z.,Tok, E.S.,Han, G.,Yeo, Y.-C. (2013). Germanium-Tin (GeSn) N-channel MOSFETs with low temperature silicon surface passivation. 2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013 : -. ScholarBank@NUS Repository. https://doi.org/10.1109/VLSI-TSA.2013.6545615||Abstract:||Germanium-tin (GeSn) n-channel MOSFETs with low temperature (370 °C) Si surface passivation were demonstrated for the first time. With Si passivation, a higher drive current is achieved for Ge0.976Sn0.024 nMOSFETs as compared to devices with GeSnO2 passivation. In addition, the effect of forming gas anneal (FGA) was investigated. FGA improves the gate dielectric interface quality, leading to improvement of subthreshold swing S. © 2013 IEEE.||Source Title:||2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013||URI:||http://scholarbank.nus.edu.sg/handle/10635/83764||ISBN:||9781467330817||DOI:||10.1109/VLSI-TSA.2013.6545615|
|Appears in Collections:||Staff Publications|
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