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Please use this identifier to cite or link to this item: https://doi.org/10.1109/VLSI-TSA.2013.6545615
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dc.titleGermanium-Tin (GeSn) N-channel MOSFETs with low temperature silicon surface passivation
dc.contributor.authorGuo, P.
dc.contributor.authorZhan, C.
dc.contributor.authorYang, Y.
dc.contributor.authorGong, X.
dc.contributor.authorLiu, B.
dc.contributor.authorCheng, R.
dc.contributor.authorWang, W.
dc.contributor.authorPan, J.
dc.contributor.authorZhang, Z.
dc.contributor.authorTok, E.S.
dc.contributor.authorHan, G.
dc.contributor.authorYeo, Y.-C.
dc.date.accessioned2014-10-07T04:44:55Z
dc.date.available2014-10-07T04:44:55Z
dc.date.issued2013
dc.identifier.citationGuo, P.,Zhan, C.,Yang, Y.,Gong, X.,Liu, B.,Cheng, R.,Wang, W.,Pan, J.,Zhang, Z.,Tok, E.S.,Han, G.,Yeo, Y.-C. (2013). Germanium-Tin (GeSn) N-channel MOSFETs with low temperature silicon surface passivation. 2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013 : -. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/VLSI-TSA.2013.6545615" target="_blank">https://doi.org/10.1109/VLSI-TSA.2013.6545615</a>
dc.identifier.isbn9781467330817
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83764
dc.description.abstractGermanium-tin (GeSn) n-channel MOSFETs with low temperature (370 °C) Si surface passivation were demonstrated for the first time. With Si passivation, a higher drive current is achieved for Ge0.976Sn0.024 nMOSFETs as compared to devices with GeSnO2 passivation. In addition, the effect of forming gas anneal (FGA) was investigated. FGA improves the gate dielectric interface quality, leading to improvement of subthreshold swing S. © 2013 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/VLSI-TSA.2013.6545615
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.contributor.departmentPHYSICS
dc.description.doi10.1109/VLSI-TSA.2013.6545615
dc.description.sourcetitle2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013
dc.description.page-
dc.identifier.isiutNOT_IN_WOS
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