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|Title:||Dopant segregation and nickel stanogermanide contact formation on p +Ge 0.947Sn 0.053 source/drain||Authors:||Han, G.
|Keywords:||Contact resistance R C
Dopant segregation (DS)
Germanium-tin (Ge 1-xSn x)
Ni(Ge 1-xSn x)
|Issue Date:||May-2012||Citation:||Han, G., Su, S., Zhou, Q., Guo, P., Yang, Y., Zhan, C., Wang, L., Wang, W., Wang, Q., Xue, C., Cheng, B., Yeo, Y.-C. (2012-05). Dopant segregation and nickel stanogermanide contact formation on p +Ge 0.947Sn 0.053 source/drain. IEEE Electron Device Letters 33 (5) : 634-636. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2012.2186430||Abstract:||P +Ge 1-xSn x is a promising source and drain (S/D) stressor material for Ge p-MOSFETs, and an S/D material in Ge 1-xSn x channel p-MOSFETs. In this paper, we investigate the dopant segregation (DS) effects in the stanogermanidation of p +Ge 0.947Sn 0.053 (boron-doped). A study comparing the contact resistance R C of nickel stanogermanide [Ni(Ge 1-xSn x) or Ni(GeSn)] contact on p +Ge 1-xSn x and nickel germanide (NiGe) contact on p + Ge was performed. A more pronounced DS effect is achieved during the stanogermanidation in comparison with the NiGe/p + Ge control. R C is 44% lower in the Ni(Ge 1-xSn x)/p + GeSn structure as compared to the NiGe/p + Ge control. The reduced R C is attributed to a more significant DS effect and the lower bandgap of Ge 1-xSn x as compared with Ge. © 2012 IEEE.||Source Title:||IEEE Electron Device Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/82169||ISSN:||07413106||DOI:||10.1109/LED.2012.2186430|
|Appears in Collections:||Staff Publications|
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