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Title: Dopant segregation and nickel stanogermanide contact formation on p +Ge 0.947Sn 0.053 source/drain
Authors: Han, G. 
Su, S.
Zhou, Q. 
Guo, P.
Yang, Y.
Zhan, C.
Wang, L.
Wang, W.
Wang, Q.
Xue, C.
Cheng, B.
Yeo, Y.-C. 
Keywords: Contact resistance R C
Dopant segregation (DS)
Germanium-tin (Ge 1-xSn x)
Ni(Ge 1-xSn x)
Issue Date: May-2012
Citation: Han, G., Su, S., Zhou, Q., Guo, P., Yang, Y., Zhan, C., Wang, L., Wang, W., Wang, Q., Xue, C., Cheng, B., Yeo, Y.-C. (2012-05). Dopant segregation and nickel stanogermanide contact formation on p +Ge 0.947Sn 0.053 source/drain. IEEE Electron Device Letters 33 (5) : 634-636. ScholarBank@NUS Repository.
Abstract: P +Ge 1-xSn x is a promising source and drain (S/D) stressor material for Ge p-MOSFETs, and an S/D material in Ge 1-xSn x channel p-MOSFETs. In this paper, we investigate the dopant segregation (DS) effects in the stanogermanidation of p +Ge 0.947Sn 0.053 (boron-doped). A study comparing the contact resistance R C of nickel stanogermanide [Ni(Ge 1-xSn x) or Ni(GeSn)] contact on p +Ge 1-xSn x and nickel germanide (NiGe) contact on p + Ge was performed. A more pronounced DS effect is achieved during the stanogermanidation in comparison with the NiGe/p + Ge control. R C is 44% lower in the Ni(Ge 1-xSn x)/p + GeSn structure as compared to the NiGe/p + Ge control. The reduced R C is attributed to a more significant DS effect and the lower bandgap of Ge 1-xSn x as compared with Ge. © 2012 IEEE.
Source Title: IEEE Electron Device Letters
ISSN: 07413106
DOI: 10.1109/LED.2012.2186430
Appears in Collections:Staff Publications

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