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|Title:||Fabrication and negative bias temperature instability (NBTI) study on Ge0.97Sn0.03 P-MOSFETs with Si2H6 passivation and HfO2 High-k and TaN metal Gate||Authors:||Gong, X.
|Issue Date:||2012||Citation:||Gong, X., Su, S., Liu, B., Wang, L., Wang, W., Yang, Y., Cheng, R., Kong, E., Cheng, B., Han, G., Yeo, Y.-C. (2012). Fabrication and negative bias temperature instability (NBTI) study on Ge0.97Sn0.03 P-MOSFETs with Si2H6 passivation and HfO2 High-k and TaN metal Gate. ECS Transactions 50 (9) : 949-956. ScholarBank@NUS Repository. https://doi.org/10.1149/05009.0949ecst||Abstract:||We report the demonstration of Ge0.97Sn0.03 P-MOSFETs, featuring low temperature Si2H6 passivation, HfO2 high-k dielectric and TaN metal gate. Ge0.97Sn 0.03 P-MOSFET with high drive current and negligible hysteresis was realized. NBTI characterization was performed to investigate the off-leakage, suthreshold swing, peak transconductance degradation and threshold voltage shift under stress. Excellent device reliability characteristics were observed. © The Electrochemical Society.||Source Title:||ECS Transactions||URI:||http://scholarbank.nus.edu.sg/handle/10635/83723||ISBN:||9781607683575||ISSN:||19385862||DOI:||10.1149/05009.0949ecst|
|Appears in Collections:||Staff Publications|
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