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Please use this identifier to cite or link to this item: https://doi.org/10.1149/05009.0949ecst
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dc.titleFabrication and negative bias temperature instability (NBTI) study on Ge0.97Sn0.03 P-MOSFETs with Si2H6 passivation and HfO2 High-k and TaN metal Gate
dc.contributor.authorGong, X.
dc.contributor.authorSu, S.
dc.contributor.authorLiu, B.
dc.contributor.authorWang, L.
dc.contributor.authorWang, W.
dc.contributor.authorYang, Y.
dc.contributor.authorCheng, R.
dc.contributor.authorKong, E.
dc.contributor.authorCheng, B.
dc.contributor.authorHan, G.
dc.contributor.authorYeo, Y.-C.
dc.date.accessioned2014-10-07T04:44:26Z
dc.date.available2014-10-07T04:44:26Z
dc.date.issued2012
dc.identifier.citationGong, X., Su, S., Liu, B., Wang, L., Wang, W., Yang, Y., Cheng, R., Kong, E., Cheng, B., Han, G., Yeo, Y.-C. (2012). Fabrication and negative bias temperature instability (NBTI) study on Ge0.97Sn0.03 P-MOSFETs with Si2H6 passivation and HfO2 High-k and TaN metal Gate. ECS Transactions 50 (9) : 949-956. ScholarBank@NUS Repository. https://doi.org/10.1149/05009.0949ecst
dc.identifier.isbn9781607683575
dc.identifier.issn19385862
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83723
dc.description.abstractWe report the demonstration of Ge0.97Sn0.03 P-MOSFETs, featuring low temperature Si2H6 passivation, HfO2 high-k dielectric and TaN metal gate. Ge0.97Sn 0.03 P-MOSFET with high drive current and negligible hysteresis was realized. NBTI characterization was performed to investigate the off-leakage, suthreshold swing, peak transconductance degradation and threshold voltage shift under stress. Excellent device reliability characteristics were observed. © The Electrochemical Society.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1149/05009.0949ecst
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1149/05009.0949ecst
dc.description.sourcetitleECS Transactions
dc.description.volume50
dc.description.issue9
dc.description.page949-956
dc.identifier.isiut000338015300113
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