Fabrication and negative bias temperature instability (NBTI) study on Ge0.97Sn0.03 P-MOSFETs with Si2H6 passivation and HfO2 High-k and TaN metal Gate

Please use this identifier to cite or link to this item: https://doi.org/10.1149/05009.0949ecst

Title:	Fabrication and negative bias temperature instability (NBTI) study on Ge0.97Sn0.03 P-MOSFETs with Si2H6 passivation and HfO2 High-k and TaN metal Gate
Authors:	Gong, X. Su, S. Liu, B. Wang, L. Wang, W. Yang, Y. Cheng, R. Kong, E. Cheng, B. Han, G. Yeo, Y.-C.
Issue Date:	2012
Citation:	Gong, X., Su, S., Liu, B., Wang, L., Wang, W., Yang, Y., Cheng, R., Kong, E., Cheng, B., Han, G., Yeo, Y.-C. (2012). Fabrication and negative bias temperature instability (NBTI) study on Ge0.97Sn0.03 P-MOSFETs with Si2H6 passivation and HfO2 High-k and TaN metal Gate. ECS Transactions 50 (9) : 949-956. ScholarBank@NUS Repository. https://doi.org/10.1149/05009.0949ecst
Abstract:	We report the demonstration of Ge0.97Sn0.03 P-MOSFETs, featuring low temperature Si2H6 passivation, HfO2 high-k dielectric and TaN metal gate. Ge0.97Sn 0.03 P-MOSFET with high drive current and negligible hysteresis was realized. NBTI characterization was performed to investigate the off-leakage, suthreshold swing, peak transconductance degradation and threshold voltage shift under stress. Excellent device reliability characteristics were observed. © The Electrochemical Society.
Source Title:	ECS Transactions
URI:	http://scholarbank.nus.edu.sg/handle/10635/83723
ISBN:	9781607683575
ISSN:	19385862
DOI:	10.1149/05009.0949ecst
Appears in Collections:	Staff Publications

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