Please use this identifier to cite or link to this item: https://doi.org/10.1149/05009.0949ecst
Title: Fabrication and negative bias temperature instability (NBTI) study on Ge0.97Sn0.03 P-MOSFETs with Si2H6 passivation and HfO2 High-k and TaN metal Gate
Authors: Gong, X.
Su, S.
Liu, B.
Wang, L.
Wang, W.
Yang, Y.
Cheng, R. 
Kong, E.
Cheng, B.
Han, G. 
Yeo, Y.-C. 
Issue Date: 2012
Source: Gong, X., Su, S., Liu, B., Wang, L., Wang, W., Yang, Y., Cheng, R., Kong, E., Cheng, B., Han, G., Yeo, Y.-C. (2012). Fabrication and negative bias temperature instability (NBTI) study on Ge0.97Sn0.03 P-MOSFETs with Si2H6 passivation and HfO2 High-k and TaN metal Gate. ECS Transactions 50 (9) : 949-956. ScholarBank@NUS Repository. https://doi.org/10.1149/05009.0949ecst
Abstract: We report the demonstration of Ge0.97Sn0.03 P-MOSFETs, featuring low temperature Si2H6 passivation, HfO2 high-k dielectric and TaN metal gate. Ge0.97Sn 0.03 P-MOSFET with high drive current and negligible hysteresis was realized. NBTI characterization was performed to investigate the off-leakage, suthreshold swing, peak transconductance degradation and threshold voltage shift under stress. Excellent device reliability characteristics were observed. © The Electrochemical Society.
Source Title: ECS Transactions
URI: http://scholarbank.nus.edu.sg/handle/10635/83723
ISBN: 9781607683575
ISSN: 19385862
DOI: 10.1149/05009.0949ecst
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