Please use this identifier to cite or link to this item:
|Title:||Fabrication and negative bias temperature instability (NBTI) study on Ge0.97Sn0.03 P-MOSFETs with Si2H6 passivation and HfO2 High-k and TaN metal Gate|
|Citation:||Gong, X., Su, S., Liu, B., Wang, L., Wang, W., Yang, Y., Cheng, R., Kong, E., Cheng, B., Han, G., Yeo, Y.-C. (2012). Fabrication and negative bias temperature instability (NBTI) study on Ge0.97Sn0.03 P-MOSFETs with Si2H6 passivation and HfO2 High-k and TaN metal Gate. ECS Transactions 50 (9) : 949-956. ScholarBank@NUS Repository. https://doi.org/10.1149/05009.0949ecst|
|Abstract:||We report the demonstration of Ge0.97Sn0.03 P-MOSFETs, featuring low temperature Si2H6 passivation, HfO2 high-k dielectric and TaN metal gate. Ge0.97Sn 0.03 P-MOSFET with high drive current and negligible hysteresis was realized. NBTI characterization was performed to investigate the off-leakage, suthreshold swing, peak transconductance degradation and threshold voltage shift under stress. Excellent device reliability characteristics were observed. © The Electrochemical Society.|
|Source Title:||ECS Transactions|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Jul 12, 2018
WEB OF SCIENCETM
checked on Jun 6, 2018
checked on Jun 1, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.