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|Title:||A new Ge 2Sb 2Te 5 (GST) liner stressor featuring stress enhancement due to amorphous-crystalline phase change for sub-20 nm p-channel FinFETs||Authors:||Ding, Y.
|Issue Date:||2011||Citation:||Ding, Y.,Cheng, R.,Koh, S.-M.,Liu, B.,Gyanathan, A.,Zhou, Q.,Tong, Y.,Lim, P.S.-Y.,Han, G.,Yeo, Y.-C. (2011). A new Ge 2Sb 2Te 5 (GST) liner stressor featuring stress enhancement due to amorphous-crystalline phase change for sub-20 nm p-channel FinFETs. Technical Digest - International Electron Devices Meeting, IEDM : 35.4.1-35.4.4. ScholarBank@NUS Repository. https://doi.org/10.1109/IEDM.2011.6131678||Abstract:||We report the first demonstration of a novel Ge 2Sb 2Te 5 (GST) liner stressor which can be shrunk or contracted (in volume) during phase-change to realize performance enhancement in p-channel FinFETs. FinFETs with ultra-scaled gate length down to ∼4.5 nm were used. Amorphous GST (α-GST) liner has intrinsic stress that increases the p-FinFET drive current as compared to unstrained control devices. Further, when the α-GST changes phase to crystalline GST (c-GST), the GST liner contracts, leading to very high channel stress and drive current enhancement. © 2011 IEEE.||Source Title:||Technical Digest - International Electron Devices Meeting, IEDM||URI:||http://scholarbank.nus.edu.sg/handle/10635/83381||ISBN:||9781457705052||ISSN:||01631918||DOI:||10.1109/IEDM.2011.6131678|
|Appears in Collections:||Staff Publications|
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