Please use this identifier to cite or link to this item:
|Title:||Device physics and design of a L-shaped germanium source tunneling transistor||Authors:||Low, K.L.
|Issue Date:||Feb-2012||Citation:||Low, K.L., Zhan, C., Han, G., Yang, Y., Goh, K.-H., Guo, P., Toh, E.-H., Yeo, Y.-C. (2012-02). Device physics and design of a L-shaped germanium source tunneling transistor. Japanese Journal of Applied Physics 51 (2 PART 2) : -. ScholarBank@NUS Repository. https://doi.org/10.1143/JJAP.51.02BC04||Abstract:||A novel tunneling field-effect transistor (TFET) with an L-shaped Ge source is investigated. The device comprises a Ge source that extends underneath a Si-channel region and separated from the drain by an insulator (SiO 2). By optimizing the overlap length of the extended source L OV and the Si body thickness T Si, the current due to vertical band-to-band tunneling (BTBT) of the Ge-Si hetero-junction could be increased significantly and is scalable with L OV. This leads to higher I ON and improved S. The SiO 2 also reduces OFF-state current I OFF by blocking leakage paths. With extensive simulation, the device physics and design guidelines of this novel structure are outlined. © 2012 The Japan Society of Applied Physics.||Source Title:||Japanese Journal of Applied Physics||URI:||http://scholarbank.nus.edu.sg/handle/10635/82149||ISSN:||00214922||DOI:||10.1143/JJAP.51.02BC04|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Mar 31, 2020
WEB OF SCIENCETM
checked on Mar 16, 2020
checked on Mar 29, 2020
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.