Please use this identifier to cite or link to this item: https://doi.org/10.1143/JJAP.51.02BC04
Title: Device physics and design of a L-shaped germanium source tunneling transistor
Authors: Low, K.L.
Zhan, C.
Han, G. 
Yang, Y.
Goh, K.-H.
Guo, P.
Toh, E.-H.
Yeo, Y.-C. 
Issue Date: Feb-2012
Citation: Low, K.L., Zhan, C., Han, G., Yang, Y., Goh, K.-H., Guo, P., Toh, E.-H., Yeo, Y.-C. (2012-02). Device physics and design of a L-shaped germanium source tunneling transistor. Japanese Journal of Applied Physics 51 (2 PART 2) : -. ScholarBank@NUS Repository. https://doi.org/10.1143/JJAP.51.02BC04
Abstract: A novel tunneling field-effect transistor (TFET) with an L-shaped Ge source is investigated. The device comprises a Ge source that extends underneath a Si-channel region and separated from the drain by an insulator (SiO 2). By optimizing the overlap length of the extended source L OV and the Si body thickness T Si, the current due to vertical band-to-band tunneling (BTBT) of the Ge-Si hetero-junction could be increased significantly and is scalable with L OV. This leads to higher I ON and improved S. The SiO 2 also reduces OFF-state current I OFF by blocking leakage paths. With extensive simulation, the device physics and design guidelines of this novel structure are outlined. © 2012 The Japan Society of Applied Physics.
Source Title: Japanese Journal of Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/82149
ISSN: 00214922
DOI: 10.1143/JJAP.51.02BC04
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