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|Title:||Transmission electron microscopy observation of CMOS devices of titanium self-aligned silicide technology with nitrogen (N+) implantation process||Authors:||Jia, Y.M.
|Issue Date:||1-Mar-1999||Citation:||Jia, Y.M., Lim, C.W., Bourdillon, A.J., Boothroyd, C. (1999-03-01). Transmission electron microscopy observation of CMOS devices of titanium self-aligned silicide technology with nitrogen (N+) implantation process. Journal of Materials Science Letters 18 (5) : 385-388. ScholarBank@NUS Repository. https://doi.org/10.1023/A:1006680617207||Abstract:||Using a p-type (100)-oriented silicon wafer as the substrate, nitrogen ion (N+) was directly introduced through ion implantation to understand the bulk effects of deeply implanted nitrogen. Cross-sectional transmission electron microscope (XTEM) analysis was performed to investigate the changes associated with N+ implantation in the Ti self-aligned silicide (SALICIDE) process and to relate these changes to the electrical properties observed. Several defects were found to occur in silicided CMOS devices with nitrogen ion-implantation after p/n junction formation.||Source Title:||Journal of Materials Science Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/107248||ISSN:||02618028||DOI:||10.1023/A:1006680617207|
|Appears in Collections:||Staff Publications|
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