Please use this identifier to cite or link to this item: https://doi.org/10.1023/A:1006680617207
Title: Transmission electron microscopy observation of CMOS devices of titanium self-aligned silicide technology with nitrogen (N+) implantation process
Authors: Jia, Y.M.
Lim, C.W.
Bourdillon, A.J. 
Boothroyd, C.
Issue Date: 1-Mar-1999
Citation: Jia, Y.M., Lim, C.W., Bourdillon, A.J., Boothroyd, C. (1999-03-01). Transmission electron microscopy observation of CMOS devices of titanium self-aligned silicide technology with nitrogen (N+) implantation process. Journal of Materials Science Letters 18 (5) : 385-388. ScholarBank@NUS Repository. https://doi.org/10.1023/A:1006680617207
Abstract: Using a p-type (100)-oriented silicon wafer as the substrate, nitrogen ion (N+) was directly introduced through ion implantation to understand the bulk effects of deeply implanted nitrogen. Cross-sectional transmission electron microscope (XTEM) analysis was performed to investigate the changes associated with N+ implantation in the Ti self-aligned silicide (SALICIDE) process and to relate these changes to the electrical properties observed. Several defects were found to occur in silicided CMOS devices with nitrogen ion-implantation after p/n junction formation.
Source Title: Journal of Materials Science Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/107248
ISSN: 02618028
DOI: 10.1023/A:1006680617207
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

Page view(s)

43
checked on Feb 15, 2020

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.