Transmission electron microscopy observation of CMOS devices of titanium self-aligned silicide technology with nitrogen (N+) implantation process

Abstract

Using a p-type (100)-oriented silicon wafer as the substrate, nitrogen ion (N+) was directly introduced through ion implantation to understand the bulk effects of deeply implanted nitrogen. Cross-sectional transmission electron microscope (XTEM) analysis was performed to investigate the changes associated with N+ implantation in the Ti self-aligned silicide (SALICIDE) process and to relate these changes to the electrical properties observed. Several defects were found to occur in silicided CMOS devices with nitrogen ion-implantation after p/n junction formation.