Please use this identifier to cite or link to this item:
|Title:||Gold-free InAlN/GaN schottky Gate HEMT on Si(111) substrate with ZrO 2 Passivation||Authors:||Kyaw, L.M.
|Issue Date:||2013||Citation:||Kyaw, L.M., Liu, Y., Bera, M.K., Ngoo, Y.J., Tripathy, S., Chor, E.F. (2013). Gold-free InAlN/GaN schottky Gate HEMT on Si(111) substrate with ZrO 2 Passivation. ECS Transactions 53 (2) : 75-83. ScholarBank@NUS Repository. https://doi.org/10.1149/05302.0075ecst||Abstract:||The electrical properties of Ti/Al/Ni/W (25/200/50/100 nm) ohmic contact and Ni/W (350/50 nm) Schottky contact to InAlN/GaN HEMT grown on high resistive Si (111) substrate are reported in this study. The specific contact resistivity of Ti/Al/Ni/W contacts has been investigated as a function of annealing temperature and Ti/Al thickness ratio, and has achieved the lowest value of 1.06×10-6 Ω·cm2 after annealing at 900°C in vacuum. The maximum Schottky barrier height of the Ni/W (350/50 nm) contact achieved is 0.72 eV at room temperature. With ZrO2 passviation, the InAlN/GaN-on-Si HEMT exhibits a higher extrinsic transconductance of 160 mS/mm (by ∼33.3%) and a lower onresistance of 10 Ω/mm (by ∼16.7%) than that without passivation. © The Electrochemical Society.||Source Title:||ECS Transactions||URI:||http://scholarbank.nus.edu.sg/handle/10635/83766||ISBN:||9781607683759||ISSN:||19385862||DOI:||10.1149/05302.0075ecst|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Jan 24, 2022
checked on Jan 20, 2022
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.