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|Title:||Evaluation of rapid thermal nitrided ONO interpoly dielectric resistance to plasma process-induced damage||Authors:||Cha, C.L.
|Issue Date:||1999||Citation:||Cha, C.L.,Chor, E.F.,Gong, H.,Zhang, A.Q.,Dong, Z.,Chan, L. (1999). Evaluation of rapid thermal nitrided ONO interpoly dielectric resistance to plasma process-induced damage. International Symposium on Plasma Process-Induced Damage, P2ID, Proceedings : 49-52. ScholarBank@NUS Repository.||Abstract:||Investigative studies to improve the resistance to plasma process-induced damage and data-retention time of ONO in Flash memory devices via a rapid thermal nitridation (RTN) process in N2O ambience have been carried out. Experimental results revealed than an extra RTN step (1050°C, 30s) after the nitride deposition during the ONO growth indeed leads to a better quality stacked dielectric layer over the conventional process. Brief explanations on the beneficial effects of RTN are provided in this paper.||Source Title:||International Symposium on Plasma Process-Induced Damage, P2ID, Proceedings||URI:||http://scholarbank.nus.edu.sg/handle/10635/80402|
|Appears in Collections:||Staff Publications|
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