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Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/80402
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dc.titleEvaluation of rapid thermal nitrided ONO interpoly dielectric resistance to plasma process-induced damage
dc.contributor.authorCha, C.L.
dc.contributor.authorChor, E.F.
dc.contributor.authorGong, H.
dc.contributor.authorZhang, A.Q.
dc.contributor.authorDong, Z.
dc.contributor.authorChan, L.
dc.date.accessioned2014-10-07T02:57:09Z
dc.date.available2014-10-07T02:57:09Z
dc.date.issued1999
dc.identifier.citationCha, C.L.,Chor, E.F.,Gong, H.,Zhang, A.Q.,Dong, Z.,Chan, L. (1999). Evaluation of rapid thermal nitrided ONO interpoly dielectric resistance to plasma process-induced damage. International Symposium on Plasma Process-Induced Damage, P2ID, Proceedings : 49-52. ScholarBank@NUS Repository.
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/80402
dc.description.abstractInvestigative studies to improve the resistance to plasma process-induced damage and data-retention time of ONO in Flash memory devices via a rapid thermal nitridation (RTN) process in N2O ambience have been carried out. Experimental results revealed than an extra RTN step (1050°C, 30s) after the nitride deposition during the ONO growth indeed leads to a better quality stacked dielectric layer over the conventional process. Brief explanations on the beneficial effects of RTN are provided in this paper.
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL ENGINEERING
dc.contributor.departmentMATERIALS SCIENCE
dc.description.sourcetitleInternational Symposium on Plasma Process-Induced Damage, P2ID, Proceedings
dc.description.page49-52
dc.description.coden243
dc.identifier.isiutNOT_IN_WOS
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