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Title: ICP etching and structure study of PECVD SiC films
Authors: Shi, J. 
Choi, W.K. 
Chor, E.F. 
Issue Date: 20-Nov-2002
Citation: Shi, J.,Choi, W.K.,Chor, E.F. (2002-11-20). ICP etching and structure study of PECVD SiC films. International Journal of Modern Physics B 16 (28-29) : 4318-4322. ScholarBank@NUS Repository.
Abstract: Results of Induction Coupled Plasma (ICP) etching of as-prepared and annealed PECVD hydrogenated amorphous silicon carbide (a-Sil-xCx:H) films using CF4/O2 chemistry are presented. The etch rate of the annealed films decreased with an increase in annealing temperature. Infrared spectra for the annealed films showed a significant decrease in the Si-H and C-H bonds, and a pronounced increase in the Si-C bonds. The XRD results showed several poly-crystalline Si-C structure in films annealed at 800°C. ESR spectra show the density of the dangling bonds increased as a function of annealing temperature. The drop in etch rate of the annealed films is due to the reduction in porous structures resulted from dehydrogenation and increased crystallinity of the film.
Source Title: International Journal of Modern Physics B
ISSN: 02179792
Appears in Collections:Staff Publications

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