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|Title:||ICP etching and structure study of PECVD SiC films||Authors:||Shi, J.
|Issue Date:||20-Nov-2002||Citation:||Shi, J.,Choi, W.K.,Chor, E.F. (2002-11-20). ICP etching and structure study of PECVD SiC films. International Journal of Modern Physics B 16 (28-29) : 4318-4322. ScholarBank@NUS Repository.||Abstract:||Results of Induction Coupled Plasma (ICP) etching of as-prepared and annealed PECVD hydrogenated amorphous silicon carbide (a-Sil-xCx:H) films using CF4/O2 chemistry are presented. The etch rate of the annealed films decreased with an increase in annealing temperature. Infrared spectra for the annealed films showed a significant decrease in the Si-H and C-H bonds, and a pronounced increase in the Si-C bonds. The XRD results showed several poly-crystalline Si-C structure in films annealed at 800°C. ESR spectra show the density of the dangling bonds increased as a function of annealing temperature. The drop in etch rate of the annealed films is due to the reduction in porous structures resulted from dehydrogenation and increased crystallinity of the film.||Source Title:||International Journal of Modern Physics B||URI:||http://scholarbank.nus.edu.sg/handle/10635/83810||ISSN:||02179792|
|Appears in Collections:||Staff Publications|
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