ICP etching and structure study of PECVD SiC films

Abstract

Results of Induction Coupled Plasma (ICP) etching of as-prepared and annealed PECVD hydrogenated amorphous silicon carbide (a-Sil-xCx:H) films using CF4/O2 chemistry are presented. The etch rate of the annealed films decreased with an increase in annealing temperature. Infrared spectra for the annealed films showed a significant decrease in the Si-H and C-H bonds, and a pronounced increase in the Si-C bonds. The XRD results showed several poly-crystalline Si-C structure in films annealed at 800°C. ESR spectra show the density of the dangling bonds increased as a function of annealing temperature. The drop in etch rate of the annealed films is due to the reduction in porous structures resulted from dehydrogenation and increased crystallinity of the film.