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Title: Effects of surface plasma treatment on n-GaN ohmic contact formation
Authors: Li, L.K.
Tan, L.S. 
Chor, E.F. 
Keywords: A1. Auger electron spectroscopy
A1. Ohmic contacts
A1. Plasma surface treatment
A1. X-ray photoelectron spectroscopy
B1. Gallium nitride
Issue Date: 1-Aug-2004
Citation: Li, L.K., Tan, L.S., Chor, E.F. (2004-08-01). Effects of surface plasma treatment on n-GaN ohmic contact formation. Journal of Crystal Growth 268 (3-4 SPEC. ISS.) : 499-503. ScholarBank@NUS Repository.
Abstract: Elemental compositions of GaN surfaces treated by N2 and BCl3/Cl2 plasmas have been investigated via AES and XPS analyses. The AES results indicate a low N/Ga ratio of 0.1 for N2 plasma-treated GaN surface and a relatively high N/Ga ratio of 0.5 for BCl 3/Cl2 plasma-treated GaN surface. Although the N/Ga ratio has often been used as an indicator for N-vacancies (VN) formation, ohmic contacts fabricated on plasma treated n-GaN surfaces with a lower N/Ga ratio do not necessarily have a correspondingly lower specific contact resistance (ρc). Ohmic contacts on N2 plasma treated n-GaN (Si∼2.6×1018cm-3) yield a higher ρc of 6.7×10-5Ωcm2, despite a lower N/Ga ratio, than similar samples with BCl3/Cl2 plasma treatment, which is 6.1×10-6Ωcm2. XPS analysis of the Ga 3d peak shows a high degree of oxidation on N2 plasma treated GaN. Hence, its low N/Ga ratio is not indicative of V N abundance at the GaN surface but a high concentration of Ga in the form of an oxide (GaxOy), thus translating to a higher ρc. © 2004 Elsevier B.V. All rights reserved.
Source Title: Journal of Crystal Growth
ISSN: 00220248
DOI: 10.1016/j.jcrysgro.2004.04.080
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