Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.physe.2011.03.020
Title: Doping-free fabrication of n-type random network single-walled carbon nanotube field effect transistor with yttrium contacts
Authors: HUANG LEIHUA 
Chor, E.F. 
Wu, Y. 
Issue Date: May-2011
Citation: HUANG LEIHUA, Chor, E.F., Wu, Y. (2011-05). Doping-free fabrication of n-type random network single-walled carbon nanotube field effect transistor with yttrium contacts. Physica E: Low-Dimensional Systems and Nanostructures 43 (7) : 1365-1370. ScholarBank@NUS Repository. https://doi.org/10.1016/j.physe.2011.03.020
Abstract: This work reports the realization of high performance n-type random network single-walled carbon nanotube (rn-SWCNT) field effect transistor (FET) by means of contact engineering, where a low work function metal, Yttrium (Y), is used as the source and drain contacts. The presence of crossed metallic (m-) and semiconducting (s-) SWCNT junctions in the channel of rn-SWCNT FETs, which form p-type rectifying Schottky barrier, is believed to introduce non-negligible hole current in the fabricated FETs and lead to undesirable ambipolar characteristic. By means of soaking in 2,4,6-triphenylpyrylium tetrafluoroborate (2,4,6-TPPT), we have successfully converted the ambipolar rn-SWCNT FETs to highly unipolar n-type devices by selectively removing the m-SWCNTs in the FET channel. The best characteristics of our unipolar n-type rn-SWCNT FETs are as follows: on/off current ratio up to ∼105, mobility as high as 25 cm2 V-1 s-1, and transconductance of 0.12 μS/μm; they have demonstrated air-stable n-type characteristics and are also more reproducibility than individual SWCNT FETs. © 2011 Elsevier B.V. All rights reserved.
Source Title: Physica E: Low-Dimensional Systems and Nanostructures
URI: http://scholarbank.nus.edu.sg/handle/10635/82171
ISSN: 13869477
DOI: 10.1016/j.physe.2011.03.020
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