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Title: Does short wavelength lithography process degrade the integrity of thin gate oxide?
Authors: Kim, S.J. 
Cho, B.J. 
Chong, P.F.
Chor, E.F. 
Ang, C.H.
Ling, C.H. 
Joo, M.S.
Yeo, I.S.
Issue Date: 2000
Citation: Kim, S.J.,Cho, B.J.,Chong, P.F.,Chor, E.F.,Ang, C.H.,Ling, C.H.,Joo, M.S.,Yeo, I.S. (2000). Does short wavelength lithography process degrade the integrity of thin gate oxide?. Microelectronics Reliability 40 (8-10) : 1609-1613. ScholarBank@NUS Repository.
Abstract: This paper presents the results of investigation on integrity of X-ray/E-beam irradiated thin gate oxides. A large increase of gate oxide leakage current is observed after irradiation on thin gate oxide under X-ray/E-beam lithography conditions. This radiation-induced leakage current (RILC) can be removed by a thermal annealing at 400°C and above, without adverse effect to the oxide integrity. In addition, it is found that ionizing exposures do not significantly affect the breakdown and quasi-breakdown characteristics in ultra-thin oxide. © 2000 Elsevier Science Ltd. All rights reserved.
Source Title: Microelectronics Reliability
ISSN: 00262714
Appears in Collections:Staff Publications

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