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|Title:||Does short wavelength lithography process degrade the integrity of thin gate oxide?||Authors:||Kim, S.J.
|Issue Date:||2000||Citation:||Kim, S.J.,Cho, B.J.,Chong, P.F.,Chor, E.F.,Ang, C.H.,Ling, C.H.,Joo, M.S.,Yeo, I.S. (2000). Does short wavelength lithography process degrade the integrity of thin gate oxide?. Microelectronics Reliability 40 (8-10) : 1609-1613. ScholarBank@NUS Repository.||Abstract:||This paper presents the results of investigation on integrity of X-ray/E-beam irradiated thin gate oxides. A large increase of gate oxide leakage current is observed after irradiation on thin gate oxide under X-ray/E-beam lithography conditions. This radiation-induced leakage current (RILC) can be removed by a thermal annealing at 400°C and above, without adverse effect to the oxide integrity. In addition, it is found that ionizing exposures do not significantly affect the breakdown and quasi-breakdown characteristics in ultra-thin oxide. © 2000 Elsevier Science Ltd. All rights reserved.||Source Title:||Microelectronics Reliability||URI:||http://scholarbank.nus.edu.sg/handle/10635/62059||ISSN:||00262714|
|Appears in Collections:||Staff Publications|
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