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Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/62059
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dc.titleDoes short wavelength lithography process degrade the integrity of thin gate oxide?
dc.contributor.authorKim, S.J.
dc.contributor.authorCho, B.J.
dc.contributor.authorChong, P.F.
dc.contributor.authorChor, E.F.
dc.contributor.authorAng, C.H.
dc.contributor.authorLing, C.H.
dc.contributor.authorJoo, M.S.
dc.contributor.authorYeo, I.S.
dc.date.accessioned2014-06-17T06:46:59Z
dc.date.available2014-06-17T06:46:59Z
dc.date.issued2000
dc.identifier.citationKim, S.J.,Cho, B.J.,Chong, P.F.,Chor, E.F.,Ang, C.H.,Ling, C.H.,Joo, M.S.,Yeo, I.S. (2000). Does short wavelength lithography process degrade the integrity of thin gate oxide?. Microelectronics Reliability 40 (8-10) : 1609-1613. ScholarBank@NUS Repository.
dc.identifier.issn00262714
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/62059
dc.description.abstractThis paper presents the results of investigation on integrity of X-ray/E-beam irradiated thin gate oxides. A large increase of gate oxide leakage current is observed after irradiation on thin gate oxide under X-ray/E-beam lithography conditions. This radiation-induced leakage current (RILC) can be removed by a thermal annealing at 400°C and above, without adverse effect to the oxide integrity. In addition, it is found that ionizing exposures do not significantly affect the breakdown and quasi-breakdown characteristics in ultra-thin oxide. © 2000 Elsevier Science Ltd. All rights reserved.
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL ENGINEERING
dc.description.sourcetitleMicroelectronics Reliability
dc.description.volume40
dc.description.issue8-10
dc.description.page1609-1613
dc.description.codenMCRLA
dc.identifier.isiutNOT_IN_WOS
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