Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.tsf.2006.07.133
Title: AlGaN/GaN high electron mobility transistors with implanted ohmic contacts
Authors: Wang, H.T.
Tan, L.S. 
Chor, E.F. 
Keywords: AlGaN/GaN HEMTs
Contact resistance
DC characteristics
Implantation
Issue Date: 26-Mar-2007
Citation: Wang, H.T., Tan, L.S., Chor, E.F. (2007-03-26). AlGaN/GaN high electron mobility transistors with implanted ohmic contacts. Thin Solid Films 515 (10) : 4476-4479. ScholarBank@NUS Repository. https://doi.org/10.1016/j.tsf.2006.07.133
Abstract: Selective area silicon implantation for source/drain regions was integrated into the fabrication of molecular beam epitaxy-grown AlGaN/GaN HEMTs. Dopant activation was achieved by rapid thermal annealing at 1100 °C in flowing N2 ambient for 120 s with an AlN encapsulation. Linear transmission line measurements showed that the resistance of the overlay Ti/Al/Ni/Au ohmic contacts was reduced by 61% compared to the control sample. After the Schottky Ni/Au gate formation, the typical DC characteristics displayed a higher current drive, smaller knee voltage and better gate control properties for HEMTs with implanted source and drain regions. © 2006 Elsevier B.V. All rights reserved.
Source Title: Thin Solid Films
URI: http://scholarbank.nus.edu.sg/handle/10635/81943
ISSN: 00406090
DOI: 10.1016/j.tsf.2006.07.133
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