Please use this identifier to cite or link to this item:
https://doi.org/10.1016/j.tsf.2006.07.133
DC Field | Value | |
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dc.title | AlGaN/GaN high electron mobility transistors with implanted ohmic contacts | |
dc.contributor.author | Wang, H.T. | |
dc.contributor.author | Tan, L.S. | |
dc.contributor.author | Chor, E.F. | |
dc.date.accessioned | 2014-10-07T04:23:31Z | |
dc.date.available | 2014-10-07T04:23:31Z | |
dc.date.issued | 2007-03-26 | |
dc.identifier.citation | Wang, H.T., Tan, L.S., Chor, E.F. (2007-03-26). AlGaN/GaN high electron mobility transistors with implanted ohmic contacts. Thin Solid Films 515 (10) : 4476-4479. ScholarBank@NUS Repository. https://doi.org/10.1016/j.tsf.2006.07.133 | |
dc.identifier.issn | 00406090 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/81943 | |
dc.description.abstract | Selective area silicon implantation for source/drain regions was integrated into the fabrication of molecular beam epitaxy-grown AlGaN/GaN HEMTs. Dopant activation was achieved by rapid thermal annealing at 1100 °C in flowing N2 ambient for 120 s with an AlN encapsulation. Linear transmission line measurements showed that the resistance of the overlay Ti/Al/Ni/Au ohmic contacts was reduced by 61% compared to the control sample. After the Schottky Ni/Au gate formation, the typical DC characteristics displayed a higher current drive, smaller knee voltage and better gate control properties for HEMTs with implanted source and drain regions. © 2006 Elsevier B.V. All rights reserved. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/j.tsf.2006.07.133 | |
dc.source | Scopus | |
dc.subject | AlGaN/GaN HEMTs | |
dc.subject | Contact resistance | |
dc.subject | DC characteristics | |
dc.subject | Implantation | |
dc.type | Article | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.doi | 10.1016/j.tsf.2006.07.133 | |
dc.description.sourcetitle | Thin Solid Films | |
dc.description.volume | 515 | |
dc.description.issue | 10 | |
dc.description.page | 4476-4479 | |
dc.description.coden | THSFA | |
dc.identifier.isiut | 000245167000038 | |
Appears in Collections: | Staff Publications |
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