Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.tsf.2006.07.133
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dc.titleAlGaN/GaN high electron mobility transistors with implanted ohmic contacts
dc.contributor.authorWang, H.T.
dc.contributor.authorTan, L.S.
dc.contributor.authorChor, E.F.
dc.date.accessioned2014-10-07T04:23:31Z
dc.date.available2014-10-07T04:23:31Z
dc.date.issued2007-03-26
dc.identifier.citationWang, H.T., Tan, L.S., Chor, E.F. (2007-03-26). AlGaN/GaN high electron mobility transistors with implanted ohmic contacts. Thin Solid Films 515 (10) : 4476-4479. ScholarBank@NUS Repository. https://doi.org/10.1016/j.tsf.2006.07.133
dc.identifier.issn00406090
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/81943
dc.description.abstractSelective area silicon implantation for source/drain regions was integrated into the fabrication of molecular beam epitaxy-grown AlGaN/GaN HEMTs. Dopant activation was achieved by rapid thermal annealing at 1100 °C in flowing N2 ambient for 120 s with an AlN encapsulation. Linear transmission line measurements showed that the resistance of the overlay Ti/Al/Ni/Au ohmic contacts was reduced by 61% compared to the control sample. After the Schottky Ni/Au gate formation, the typical DC characteristics displayed a higher current drive, smaller knee voltage and better gate control properties for HEMTs with implanted source and drain regions. © 2006 Elsevier B.V. All rights reserved.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/j.tsf.2006.07.133
dc.sourceScopus
dc.subjectAlGaN/GaN HEMTs
dc.subjectContact resistance
dc.subjectDC characteristics
dc.subjectImplantation
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1016/j.tsf.2006.07.133
dc.description.sourcetitleThin Solid Films
dc.description.volume515
dc.description.issue10
dc.description.page4476-4479
dc.description.codenTHSFA
dc.identifier.isiut000245167000038
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