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|Title:||AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistor with polarized P(VDF-TrFE) Ferroelectric polymer gating||Authors:||Liu X.
Seow Tan L.
|Issue Date:||2015||Publisher:||Nature Publishing Group||Citation:||Liu X., Lu Y., Yu W., Wu J., He J., Tang D., Liu Z., Somasuntharam P., Zhu D., Liu W., Cao P., Han S., Chen S., Seow Tan L. (2015). AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistor with polarized P(VDF-TrFE) Ferroelectric polymer gating. Scientific Reports 5 : 14092. ScholarBank@NUS Repository. https://doi.org/10.1038/srep14092||Abstract:||Effect of a polarized P(VDF-TrFE) ferroelectric polymer gating on AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) was investigated. The P(VDF-TrFE) gating in the source/drain access regions of AlGaN/GaN MOS-HEMTs was positively polarized (i.e., partially positively charged hydrogen were aligned to the AlGaN surface) by an applied electric field, resulting in a shift-down of the conduction band at the AlGaN/GaN interface. This increases the 2-dimensional electron gas (2-DEG) density in the source/drain access region of the AlGaN/GaN heterostructure, and thereby reduces the source/drain series resistance. Detailed material characterization of the P(VDF-TrFE) ferroelectric film was also carried out using the atomic force microscopy (AFM), X-ray Diffraction (XRD), and ferroelectric hysteresis loop measurement.||Source Title:||Scientific Reports||URI:||https://scholarbank.nus.edu.sg/handle/10635/175485||ISSN:||20452322||DOI:||10.1038/srep14092|
|Appears in Collections:||Staff Publications|
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